JPS53114372A - Forming method of amorphous semiconductor thin film - Google Patents

Forming method of amorphous semiconductor thin film

Info

Publication number
JPS53114372A
JPS53114372A JP2800877A JP2800877A JPS53114372A JP S53114372 A JPS53114372 A JP S53114372A JP 2800877 A JP2800877 A JP 2800877A JP 2800877 A JP2800877 A JP 2800877A JP S53114372 A JPS53114372 A JP S53114372A
Authority
JP
Japan
Prior art keywords
amorphous semiconductor
thin film
forming method
semiconductor thin
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2800877A
Other languages
Japanese (ja)
Inventor
Okio Yoshida
Yoshiaki Hayashimoto
Isao Nagae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2800877A priority Critical patent/JPS53114372A/en
Publication of JPS53114372A publication Critical patent/JPS53114372A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: As As-Se-based amorphous semiconductor meterials, either Au or Ag or the both are fused to be used for a vapor-deposition source to form the vapor-deposited film of a pickup tube terget, thereby evading the deterioration of picture quality and preventing the short when a photo battery is used.
COPYRIGHT: (C)1978,JPO&Japio
JP2800877A 1977-03-16 1977-03-16 Forming method of amorphous semiconductor thin film Pending JPS53114372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2800877A JPS53114372A (en) 1977-03-16 1977-03-16 Forming method of amorphous semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2800877A JPS53114372A (en) 1977-03-16 1977-03-16 Forming method of amorphous semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS53114372A true JPS53114372A (en) 1978-10-05

Family

ID=12236749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2800877A Pending JPS53114372A (en) 1977-03-16 1977-03-16 Forming method of amorphous semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS53114372A (en)

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