JPS529350B2 - - Google Patents
Info
- Publication number
- JPS529350B2 JPS529350B2 JP46099670A JP9967071A JPS529350B2 JP S529350 B2 JPS529350 B2 JP S529350B2 JP 46099670 A JP46099670 A JP 46099670A JP 9967071 A JP9967071 A JP 9967071A JP S529350 B2 JPS529350 B2 JP S529350B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Weting (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP46099670A JPS529350B2 (ja) | 1971-12-08 | 1971-12-08 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP46099670A JPS529350B2 (ja) | 1971-12-08 | 1971-12-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4864890A JPS4864890A (ja) | 1973-09-07 |
JPS529350B2 true JPS529350B2 (ja) | 1977-03-15 |
Family
ID=14253454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP46099670A Expired JPS529350B2 (ja) | 1971-12-08 | 1971-12-08 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS529350B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
JPS57202737A (en) * | 1982-03-13 | 1982-12-11 | Agency Of Ind Science & Technol | Formation of minute structure |
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1971
- 1971-12-08 JP JP46099670A patent/JPS529350B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS4864890A (ja) | 1973-09-07 |