JPS528143B2 - - Google Patents

Info

Publication number
JPS528143B2
JPS528143B2 JP47119734A JP11973472A JPS528143B2 JP S528143 B2 JPS528143 B2 JP S528143B2 JP 47119734 A JP47119734 A JP 47119734A JP 11973472 A JP11973472 A JP 11973472A JP S528143 B2 JPS528143 B2 JP S528143B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47119734A
Other versions
JPS4865866A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4865866A publication Critical patent/JPS4865866A/ja
Publication of JPS528143B2 publication Critical patent/JPS528143B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096Synchronous circuits, i.e. using clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP47119734A 1971-12-02 1972-11-28 Expired JPS528143B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20424671A 1971-12-02 1971-12-02

Publications (2)

Publication Number Publication Date
JPS4865866A JPS4865866A (ja) 1973-09-10
JPS528143B2 true JPS528143B2 (ja) 1977-03-07

Family

ID=22757184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47119734A Expired JPS528143B2 (ja) 1971-12-02 1972-11-28

Country Status (5)

Country Link
US (1) US3745370A (ja)
JP (1) JPS528143B2 (ja)
CA (1) CA945227A (ja)
FR (1) FR2161895B1 (ja)
GB (1) GB1340020A (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2131939C3 (de) * 1971-06-26 1975-11-27 Ibm Deutschland Gmbh, 7000 Stuttgart Logisch gesteuerte Inverterstufe
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit
US4449224A (en) * 1980-12-29 1984-05-15 Eliyahou Harari Dynamic merged load logic (MLL) and merged load memory (MLM)
CN116722861B (zh) * 2023-08-09 2023-11-14 脉冲视觉(北京)科技有限公司 信号的逻辑处理方法、装置、电子设备和存储介质

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3502909A (en) * 1968-12-10 1970-03-24 Shell Oil Co Pulsed substrate transistor inverter

Also Published As

Publication number Publication date
DE2247178A1 (de) 1973-06-14
CA945227A (en) 1974-04-09
DE2247178B2 (de) 1975-11-13
FR2161895B1 (ja) 1975-03-07
US3745370A (en) 1973-07-10
GB1340020A (en) 1973-12-05
FR2161895A1 (ja) 1973-07-13
JPS4865866A (ja) 1973-09-10

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