JPS5279851A - Variable retardation device for electric charge transfer element - Google Patents

Variable retardation device for electric charge transfer element

Info

Publication number
JPS5279851A
JPS5279851A JP15865875A JP15865875A JPS5279851A JP S5279851 A JPS5279851 A JP S5279851A JP 15865875 A JP15865875 A JP 15865875A JP 15865875 A JP15865875 A JP 15865875A JP S5279851 A JPS5279851 A JP S5279851A
Authority
JP
Japan
Prior art keywords
electric charge
charge transfer
transfer element
retardation device
variable retardation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15865875A
Other languages
Japanese (ja)
Inventor
Makoto Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15865875A priority Critical patent/JPS5279851A/en
Publication of JPS5279851A publication Critical patent/JPS5279851A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]

Landscapes

  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To eliminate the influence of a level variation and an amplitude variation by changing an input signal to the electric charge transfer element into a frequency modulation wave, and making a retadation time variable, and further prevent from reduction of S/N ratio by protecting the leakage of a clock signal.
JP15865875A 1975-12-26 1975-12-26 Variable retardation device for electric charge transfer element Pending JPS5279851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15865875A JPS5279851A (en) 1975-12-26 1975-12-26 Variable retardation device for electric charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15865875A JPS5279851A (en) 1975-12-26 1975-12-26 Variable retardation device for electric charge transfer element

Publications (1)

Publication Number Publication Date
JPS5279851A true JPS5279851A (en) 1977-07-05

Family

ID=15676512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15865875A Pending JPS5279851A (en) 1975-12-26 1975-12-26 Variable retardation device for electric charge transfer element

Country Status (1)

Country Link
JP (1) JPS5279851A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6466273B1 (en) 1997-05-15 2002-10-15 Matsushita Electric Industrial Co., Ltd. Analog FIFO memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6466273B1 (en) 1997-05-15 2002-10-15 Matsushita Electric Industrial Co., Ltd. Analog FIFO memory device

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