JPS5247875B2 - - Google Patents

Info

Publication number
JPS5247875B2
JPS5247875B2 JP7617772A JP7617772A JPS5247875B2 JP S5247875 B2 JPS5247875 B2 JP S5247875B2 JP 7617772 A JP7617772 A JP 7617772A JP 7617772 A JP7617772 A JP 7617772A JP S5247875 B2 JPS5247875 B2 JP S5247875B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7617772A
Other languages
Japanese (ja)
Other versions
JPS4934276A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7617772A priority Critical patent/JPS5247875B2/ja
Priority to GB3494573A priority patent/GB1414060A/en
Priority to CA177,297A priority patent/CA987795A/en
Priority to IT69257/73A priority patent/IT991882B/en
Priority to FR7327721A priority patent/FR2195069B1/fr
Priority to DE2338244A priority patent/DE2338244B2/en
Priority to US383653A priority patent/US3909317A/en
Publication of JPS4934276A publication Critical patent/JPS4934276A/ja
Publication of JPS5247875B2 publication Critical patent/JPS5247875B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7617772A 1972-07-28 1972-07-28 Expired JPS5247875B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP7617772A JPS5247875B2 (en) 1972-07-28 1972-07-28
GB3494573A GB1414060A (en) 1972-07-28 1973-07-23 Semoconductor devices
CA177,297A CA987795A (en) 1972-07-28 1973-07-25 Apparatus and method for making multi-layer epitaxial growth devices
IT69257/73A IT991882B (en) 1972-07-28 1973-07-26 PROCEDURE AND DEVICE FOR THE PRODUCTION OF SEMICONDUCTORS WITH MULTIPLE EPITAXIAL LAYERS
FR7327721A FR2195069B1 (en) 1972-07-28 1973-07-27
DE2338244A DE2338244B2 (en) 1972-07-28 1973-07-27 Method and device for the production of a multilayered semiconductor component with epitaxial growth layers
US383653A US3909317A (en) 1972-07-28 1973-07-30 Formation of abrupt junctions in liquid phase epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7617772A JPS5247875B2 (en) 1972-07-28 1972-07-28

Publications (2)

Publication Number Publication Date
JPS4934276A JPS4934276A (en) 1974-03-29
JPS5247875B2 true JPS5247875B2 (en) 1977-12-06

Family

ID=13597806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7617772A Expired JPS5247875B2 (en) 1972-07-28 1972-07-28

Country Status (1)

Country Link
JP (1) JPS5247875B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109180A (en) * 1974-02-06 1975-08-28
JPS5171883A (en) * 1974-12-20 1976-06-22 Nippon Telegraph & Telephone EKISOEPITAKISHARUSEICHOHO OYOBI SORENIMOCHIIRU SOCHI
JPS54103745U (en) * 1977-12-30 1979-07-21

Also Published As

Publication number Publication date
JPS4934276A (en) 1974-03-29

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