JPS5242356B1 - - Google Patents
Info
- Publication number
- JPS5242356B1 JPS5242356B1 JP4210172A JP4210172A JPS5242356B1 JP S5242356 B1 JPS5242356 B1 JP S5242356B1 JP 4210172 A JP4210172 A JP 4210172A JP 4210172 A JP4210172 A JP 4210172A JP S5242356 B1 JPS5242356 B1 JP S5242356B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13821971A | 1971-04-28 | 1971-04-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5242356B1 true JPS5242356B1 (ja) | 1977-10-24 |
Family
ID=22481004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4210172A Pending JPS5242356B1 (ja) | 1971-04-28 | 1972-04-26 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5242356B1 (ja) |
| DE (1) | DE2215462C2 (ja) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1153497A (en) * | 1966-07-25 | 1969-05-29 | Associated Semiconductor Mft | Improvements in and relating to Semiconductor Devices |
| US3577045A (en) * | 1968-09-18 | 1971-05-04 | Gen Electric | High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities |
-
1972
- 1972-03-29 DE DE19722215462 patent/DE2215462C2/de not_active Expired
- 1972-04-26 JP JP4210172A patent/JPS5242356B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2215462A1 (de) | 1972-11-09 |
| DE2215462C2 (de) | 1983-03-31 |