JPS5233473B1 - - Google Patents
Info
- Publication number
- JPS5233473B1 JPS5233473B1 JP51153228A JP15322876A JPS5233473B1 JP S5233473 B1 JPS5233473 B1 JP S5233473B1 JP 51153228 A JP51153228 A JP 51153228A JP 15322876 A JP15322876 A JP 15322876A JP S5233473 B1 JPS5233473 B1 JP S5233473B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51153228A JPS5233473B1 (xx) | 1976-12-20 | 1976-12-20 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51153228A JPS5233473B1 (xx) | 1976-12-20 | 1976-12-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5233473B1 true JPS5233473B1 (xx) | 1977-08-29 |
Family
ID=15557845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51153228A Pending JPS5233473B1 (xx) | 1976-12-20 | 1976-12-20 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5233473B1 (xx) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
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1976
- 1976-12-20 JP JP51153228A patent/JPS5233473B1/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |