JPS5231153B2 - - Google Patents
Info
- Publication number
- JPS5231153B2 JPS5231153B2 JP47107654A JP10765472A JPS5231153B2 JP S5231153 B2 JPS5231153 B2 JP S5231153B2 JP 47107654 A JP47107654 A JP 47107654A JP 10765472 A JP10765472 A JP 10765472A JP S5231153 B2 JPS5231153 B2 JP S5231153B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10W74/40—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
- H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P95/00—
Landscapes
- Weting (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19385371A | 1971-10-29 | 1971-10-29 | |
| US19396171A | 1971-10-29 | 1971-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4853679A JPS4853679A (enExample) | 1973-07-27 |
| JPS5231153B2 true JPS5231153B2 (enExample) | 1977-08-12 |
Family
ID=26889421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47107654A Expired JPS5231153B2 (enExample) | 1971-10-29 | 1972-10-28 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5231153B2 (enExample) |
| DE (1) | DE2253001A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5815934B2 (ja) * | 1972-12-11 | 1983-03-28 | 富士通株式会社 | ハンドウタイソウチ ノ セイゾウホウホウ |
| US3951693A (en) * | 1974-01-17 | 1976-04-20 | Motorola, Inc. | Ion-implanted self-aligned transistor device including the fabrication method therefor |
| JPS5146077A (ja) * | 1974-10-18 | 1976-04-20 | Hitachi Ltd | Handotaisochi |
| JPS5169368A (en) * | 1974-12-12 | 1976-06-15 | Matsushita Electric Industrial Co Ltd | Handotaisochino seizohoho |
| JPS597230B2 (ja) * | 1976-01-12 | 1984-02-17 | ティーディーケイ株式会社 | 絶縁ゲイト型電界効界半導体装置およびその作製方法 |
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1972
- 1972-10-28 DE DE2253001A patent/DE2253001A1/de active Pending
- 1972-10-28 JP JP47107654A patent/JPS5231153B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4853679A (enExample) | 1973-07-27 |
| DE2253001A1 (de) | 1973-05-10 |