JPS5227517B2 - - Google Patents

Info

Publication number
JPS5227517B2
JPS5227517B2 JP51084997A JP8499776A JPS5227517B2 JP S5227517 B2 JPS5227517 B2 JP S5227517B2 JP 51084997 A JP51084997 A JP 51084997A JP 8499776 A JP8499776 A JP 8499776A JP S5227517 B2 JPS5227517 B2 JP S5227517B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51084997A
Other languages
Japanese (ja)
Other versions
JPS5245286A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP51084997A priority Critical patent/JPS5245286A/ja
Publication of JPS5245286A publication Critical patent/JPS5245286A/ja
Publication of JPS5227517B2 publication Critical patent/JPS5227517B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
JP51084997A 1976-07-19 1976-07-19 Manufcturing method of field effect transistor of silicon gate type Granted JPS5245286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51084997A JPS5245286A (en) 1976-07-19 1976-07-19 Manufcturing method of field effect transistor of silicon gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51084997A JPS5245286A (en) 1976-07-19 1976-07-19 Manufcturing method of field effect transistor of silicon gate type

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP46026671A Division JPS5147311B1 (cs) 1971-04-26 1971-04-26

Publications (2)

Publication Number Publication Date
JPS5245286A JPS5245286A (en) 1977-04-09
JPS5227517B2 true JPS5227517B2 (cs) 1977-07-20

Family

ID=13846260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51084997A Granted JPS5245286A (en) 1976-07-19 1976-07-19 Manufcturing method of field effect transistor of silicon gate type

Country Status (1)

Country Link
JP (1) JPS5245286A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469615A (en) * 1977-11-12 1979-06-04 Mitsubishi Heavy Ind Ltd Inspection method for worked injection hole of injection nozzle

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014135A (cs) * 1973-06-11 1975-02-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469615A (en) * 1977-11-12 1979-06-04 Mitsubishi Heavy Ind Ltd Inspection method for worked injection hole of injection nozzle

Also Published As

Publication number Publication date
JPS5245286A (en) 1977-04-09

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