JPS5227040B2 - - Google Patents

Info

Publication number
JPS5227040B2
JPS5227040B2 JP50066656A JP6665675A JPS5227040B2 JP S5227040 B2 JPS5227040 B2 JP S5227040B2 JP 50066656 A JP50066656 A JP 50066656A JP 6665675 A JP6665675 A JP 6665675A JP S5227040 B2 JPS5227040 B2 JP S5227040B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50066656A
Other languages
Japanese (ja)
Other versions
JPS516688A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS516688A publication Critical patent/JPS516688A/ja
Publication of JPS5227040B2 publication Critical patent/JPS5227040B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/197Bipolar transistor image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/103Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/088J-Fet, i.e. junction field effect transistor

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP50066656A 1974-06-24 1975-06-04 Expired JPS5227040B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/482,178 US3958264A (en) 1974-06-24 1974-06-24 Space-charge-limited phototransistor

Publications (2)

Publication Number Publication Date
JPS516688A JPS516688A (enExample) 1976-01-20
JPS5227040B2 true JPS5227040B2 (enExample) 1977-07-18

Family

ID=23915030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50066656A Expired JPS5227040B2 (enExample) 1974-06-24 1975-06-04

Country Status (10)

Country Link
US (1) US3958264A (enExample)
JP (1) JPS5227040B2 (enExample)
CA (1) CA1039839A (enExample)
CH (1) CH583971A5 (enExample)
DE (1) DE2521435C2 (enExample)
FR (1) FR2276697A1 (enExample)
GB (1) GB1501962A (enExample)
IT (1) IT1037605B (enExample)
NL (1) NL7507429A (enExample)
SE (1) SE406390B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772345U (enExample) * 1980-10-22 1982-05-04

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
US4212023A (en) * 1978-11-30 1980-07-08 General Electric Company Bilateral phototransistor
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置
US4618380A (en) * 1985-06-18 1986-10-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of fabricating an imaging X-ray spectrometer
DE102016114676B4 (de) * 2016-08-08 2023-08-03 Infineon Technologies Ag Vorrichtung zur Transformation einer elektrischen Leistung einer elektromagnetischen Welle in ein elektrisches Gleichspannungssignal

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3551761A (en) * 1968-08-13 1970-12-29 Ibm Integrated photodiode array
US3626825A (en) * 1970-05-28 1971-12-14 Texas Instruments Inc Radiation-sensitive camera shutter and aperture control systems
US3706130A (en) * 1970-07-13 1972-12-19 Motorola Inc Voltage distribution for integrated circuits
US3714526A (en) * 1971-02-19 1973-01-30 Nasa Phototransistor
BE792639A (fr) * 1971-12-17 1973-03-30 Ibm Transistor a charge d'espace limitee
JPS5213918B2 (enExample) * 1972-02-02 1977-04-18
JPS5641186B2 (enExample) * 1972-03-03 1981-09-26
US3764410A (en) * 1972-03-13 1973-10-09 Motorola Inc Method of making ultra fine geometry planar semiconductor devices
US3855609A (en) * 1973-12-26 1974-12-17 Ibm Space charge limited transistor having recessed dielectric isolation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772345U (enExample) * 1980-10-22 1982-05-04

Also Published As

Publication number Publication date
US3958264A (en) 1976-05-18
SE406390B (sv) 1979-02-05
FR2276697B1 (enExample) 1977-04-15
SE7506619L (sv) 1975-12-29
AU8100475A (en) 1976-11-11
JPS516688A (enExample) 1976-01-20
IT1037605B (it) 1979-11-20
DE2521435C2 (de) 1982-08-26
CH583971A5 (enExample) 1977-01-14
CA1039839A (en) 1978-10-03
DE2521435A1 (de) 1976-01-15
NL7507429A (nl) 1975-12-30
FR2276697A1 (fr) 1976-01-23
GB1501962A (en) 1978-02-22

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