JPS5227034B2 - - Google Patents
Info
- Publication number
- JPS5227034B2 JPS5227034B2 JP48112234A JP11223473A JPS5227034B2 JP S5227034 B2 JPS5227034 B2 JP S5227034B2 JP 48112234 A JP48112234 A JP 48112234A JP 11223473 A JP11223473 A JP 11223473A JP S5227034 B2 JPS5227034 B2 JP S5227034B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16829471A | 1971-08-02 | 1971-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5063880A JPS5063880A (ru) | 1975-05-30 |
JPS5227034B2 true JPS5227034B2 (ru) | 1977-07-18 |
Family
ID=22610910
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47077256A Expired JPS5116313B2 (ru) | 1971-08-02 | 1972-08-01 | |
JP48112234A Expired JPS5227034B2 (ru) | 1971-08-02 | 1973-10-05 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47077256A Expired JPS5116313B2 (ru) | 1971-08-02 | 1972-08-01 |
Country Status (1)
Country | Link |
---|---|
JP (2) | JPS5116313B2 (ru) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53163678U (ru) * | 1977-05-31 | 1978-12-21 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS501684A (ru) * | 1973-05-07 | 1975-01-09 | ||
JPS5940579A (ja) * | 1982-08-30 | 1984-03-06 | Agency Of Ind Science & Technol | 絶縁ゲ−ト電界効果トランジスタ |
JPS646190U (ru) * | 1987-06-29 | 1989-01-13 |
-
1972
- 1972-08-01 JP JP47077256A patent/JPS5116313B2/ja not_active Expired
-
1973
- 1973-10-05 JP JP48112234A patent/JPS5227034B2/ja not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53163678U (ru) * | 1977-05-31 | 1978-12-21 |
Also Published As
Publication number | Publication date |
---|---|
JPS5116313B2 (ru) | 1976-05-22 |
JPS4826085A (ru) | 1973-04-05 |
JPS5063880A (ru) | 1975-05-30 |