JPS5225295B2 - - Google Patents

Info

Publication number
JPS5225295B2
JPS5225295B2 JP48054200A JP5420073A JPS5225295B2 JP S5225295 B2 JPS5225295 B2 JP S5225295B2 JP 48054200 A JP48054200 A JP 48054200A JP 5420073 A JP5420073 A JP 5420073A JP S5225295 B2 JPS5225295 B2 JP S5225295B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48054200A
Other languages
Japanese (ja)
Other versions
JPS4943572A (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4943572A publication Critical patent/JPS4943572A/ja
Publication of JPS5225295B2 publication Critical patent/JPS5225295B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP48054200A 1972-05-20 1973-05-17 Expired JPS5225295B2 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (cg-RX-API-DMAC7.html) 1972-05-20 1972-05-20

Publications (2)

Publication Number Publication Date
JPS4943572A JPS4943572A (cg-RX-API-DMAC7.html) 1974-04-24
JPS5225295B2 true JPS5225295B2 (cg-RX-API-DMAC7.html) 1977-07-06

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48054200A Expired JPS5225295B2 (cg-RX-API-DMAC7.html) 1972-05-20 1973-05-17

Country Status (7)

Country Link
JP (1) JPS5225295B2 (cg-RX-API-DMAC7.html)
CA (1) CA990626A (cg-RX-API-DMAC7.html)
DE (1) DE2324127A1 (cg-RX-API-DMAC7.html)
FR (1) FR2185445B1 (cg-RX-API-DMAC7.html)
GB (1) GB1406760A (cg-RX-API-DMAC7.html)
IT (1) IT985922B (cg-RX-API-DMAC7.html)
NL (1) NL7206877A (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3166609D1 (en) * 1980-07-28 1984-11-15 Monsanto Co Improved method for producing semiconductor grade silicon
JPS6169116A (ja) * 1984-09-13 1986-04-09 Toshiba Ceramics Co Ltd シリコンウエハ−の連続cvdコ−テイング用サセプター
JP3725598B2 (ja) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 エピタキシャルウェハの製造方法
JP2006070342A (ja) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd 気相成膜装置、サセプタおよび気相成膜方法
JP6333646B2 (ja) 2014-07-08 2018-05-30 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングBASF Coatings GmbH 二液型塗料組成物及びそれを用いた複層塗膜形成方法
EP4353863A1 (en) 2022-10-12 2024-04-17 Imec VZW A method for depositing a transition metal dichalcogenide

Also Published As

Publication number Publication date
JPS4943572A (cg-RX-API-DMAC7.html) 1974-04-24
FR2185445B1 (cg-RX-API-DMAC7.html) 1976-06-11
DE2324127A1 (de) 1973-12-06
FR2185445A1 (cg-RX-API-DMAC7.html) 1974-01-04
IT985922B (it) 1974-12-30
GB1406760A (en) 1975-09-17
NL7206877A (cg-RX-API-DMAC7.html) 1973-11-22
CA990626A (en) 1976-06-08

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