JPS5221360B1 - - Google Patents
Info
- Publication number
- JPS5221360B1 JPS5221360B1 JP46007425A JP742571A JPS5221360B1 JP S5221360 B1 JPS5221360 B1 JP S5221360B1 JP 46007425 A JP46007425 A JP 46007425A JP 742571 A JP742571 A JP 742571A JP S5221360 B1 JPS5221360 B1 JP S5221360B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46007425A JPS5221360B1 (enExample) | 1971-02-19 | 1971-02-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP46007425A JPS5221360B1 (enExample) | 1971-02-19 | 1971-02-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5221360B1 true JPS5221360B1 (enExample) | 1977-06-09 |
Family
ID=11665498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP46007425A Pending JPS5221360B1 (enExample) | 1971-02-19 | 1971-02-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5221360B1 (enExample) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3345221A (en) * | 1963-04-10 | 1967-10-03 | Motorola Inc | Method of making a semiconductor device having improved pn junction avalanche characteristics |
| US3417299A (en) * | 1965-07-20 | 1968-12-17 | Raytheon Co | Controlled breakdown voltage diode |
| US3483441A (en) * | 1965-12-30 | 1969-12-09 | Siemens Ag | Avalanche diode for generating oscillations under quasi-stationary and transit-time conditions |
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1971
- 1971-02-19 JP JP46007425A patent/JPS5221360B1/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3345221A (en) * | 1963-04-10 | 1967-10-03 | Motorola Inc | Method of making a semiconductor device having improved pn junction avalanche characteristics |
| US3484308A (en) * | 1963-04-10 | 1969-12-16 | Motorola Inc | Semiconductor device |
| US3417299A (en) * | 1965-07-20 | 1968-12-17 | Raytheon Co | Controlled breakdown voltage diode |
| US3483441A (en) * | 1965-12-30 | 1969-12-09 | Siemens Ag | Avalanche diode for generating oscillations under quasi-stationary and transit-time conditions |