JPS5221360B1 - - Google Patents

Info

Publication number
JPS5221360B1
JPS5221360B1 JP742571A JP742571A JPS5221360B1 JP S5221360 B1 JPS5221360 B1 JP S5221360B1 JP 742571 A JP742571 A JP 742571A JP 742571 A JP742571 A JP 742571A JP S5221360 B1 JPS5221360 B1 JP S5221360B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP742571A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP742571A priority Critical patent/JPS5221360B1/ja
Publication of JPS5221360B1 publication Critical patent/JPS5221360B1/ja
Pending legal-status Critical Current

Links

JP742571A 1971-02-19 1971-02-19 Pending JPS5221360B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP742571A JPS5221360B1 (en) 1971-02-19 1971-02-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP742571A JPS5221360B1 (en) 1971-02-19 1971-02-19

Publications (1)

Publication Number Publication Date
JPS5221360B1 true JPS5221360B1 (en) 1977-06-09

Family

ID=11665498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP742571A Pending JPS5221360B1 (en) 1971-02-19 1971-02-19

Country Status (1)

Country Link
JP (1) JPS5221360B1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
US3483441A (en) * 1965-12-30 1969-12-09 Siemens Ag Avalanche diode for generating oscillations under quasi-stationary and transit-time conditions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345221A (en) * 1963-04-10 1967-10-03 Motorola Inc Method of making a semiconductor device having improved pn junction avalanche characteristics
US3484308A (en) * 1963-04-10 1969-12-16 Motorola Inc Semiconductor device
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
US3483441A (en) * 1965-12-30 1969-12-09 Siemens Ag Avalanche diode for generating oscillations under quasi-stationary and transit-time conditions

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