JPS52149666U - - Google Patents

Info

Publication number
JPS52149666U
JPS52149666U JP1976058409U JP5840976U JPS52149666U JP S52149666 U JPS52149666 U JP S52149666U JP 1976058409 U JP1976058409 U JP 1976058409U JP 5840976 U JP5840976 U JP 5840976U JP S52149666 U JPS52149666 U JP S52149666U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1976058409U
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1976058409U priority Critical patent/JPS52149666U/ja
Priority to US05/795,436 priority patent/US4138690A/en
Publication of JPS52149666U publication Critical patent/JPS52149666U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP1976058409U 1976-05-11 1976-05-11 Pending JPS52149666U (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1976058409U JPS52149666U (ja) 1976-05-11 1976-05-11
US05/795,436 US4138690A (en) 1976-05-11 1977-05-10 Darlington circuit semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1976058409U JPS52149666U (ja) 1976-05-11 1976-05-11

Publications (1)

Publication Number Publication Date
JPS52149666U true JPS52149666U (ja) 1977-11-12

Family

ID=13083559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1976058409U Pending JPS52149666U (ja) 1976-05-11 1976-05-11

Country Status (2)

Country Link
US (1) US4138690A (ja)
JP (1) JPS52149666U (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
US4456839A (en) * 1979-03-30 1984-06-26 General Electric Company High gain latching Darlington transistor
US4295059A (en) * 1979-03-30 1981-10-13 General Electric Company High gain latching Darlington transistor
NL7902632A (nl) * 1979-04-04 1980-10-07 Philips Nv Transistorschakelaar.
FR2458146A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure integree comportant un transistor et trois diodes antisaturation
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
DE3435571A1 (de) 1984-09-27 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte bipolare darlington-schaltung
JPS62250661A (ja) * 1986-04-23 1987-10-31 Fuji Electric Co Ltd 半導体装置
IT1245365B (it) * 1991-03-28 1994-09-20 Cons Ric Microelettronica Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione
US6552594B2 (en) * 1997-03-27 2003-04-22 Winbond Electronics, Corp. Output buffer with improved ESD protection
CN1110098C (zh) * 1999-07-27 2003-05-28 北京工业大学 具有电阻通道的高速高压功率集成器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1293308B (de) * 1966-01-21 1969-04-24 Siemens Ag Transistoranordnung zur Strombegrenzung
US3466467A (en) * 1966-05-23 1969-09-09 Bell Telephone Labor Inc Solid state switching circuit
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
US3648060A (en) * 1970-08-21 1972-03-07 Ferroxcube Corp Transistorized current switch for memory systems

Also Published As

Publication number Publication date
US4138690A (en) 1979-02-06

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