JPS52127788A - Semiconductor lser device of monoaxis mode oscilation - Google Patents
Semiconductor lser device of monoaxis mode oscilationInfo
- Publication number
- JPS52127788A JPS52127788A JP4459076A JP4459076A JPS52127788A JP S52127788 A JPS52127788 A JP S52127788A JP 4459076 A JP4459076 A JP 4459076A JP 4459076 A JP4459076 A JP 4459076A JP S52127788 A JPS52127788 A JP S52127788A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- monoaxis
- oscilation
- lser
- mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To make it possible to make the low voltage operation by small size, by dividing one electrode of the semiconductor laser to the resonance axis direction, and applying the voltage to one of them independently from other electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51044590A JPS5854515B2 (en) | 1976-04-19 | 1976-04-19 | Single-axis mode oscillation semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51044590A JPS5854515B2 (en) | 1976-04-19 | 1976-04-19 | Single-axis mode oscillation semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52127788A true JPS52127788A (en) | 1977-10-26 |
JPS5854515B2 JPS5854515B2 (en) | 1983-12-05 |
Family
ID=12695679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51044590A Expired JPS5854515B2 (en) | 1976-04-19 | 1976-04-19 | Single-axis mode oscillation semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5854515B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6362388A (en) * | 1986-09-03 | 1988-03-18 | Hitachi Ltd | Semiconductor laser device |
-
1976
- 1976-04-19 JP JP51044590A patent/JPS5854515B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6362388A (en) * | 1986-09-03 | 1988-03-18 | Hitachi Ltd | Semiconductor laser device |
Also Published As
Publication number | Publication date |
---|---|
JPS5854515B2 (en) | 1983-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE7703323L (en) | PROCEDURE FOR MOVING A URL LOADING POINT | |
JPS52127788A (en) | Semiconductor lser device of monoaxis mode oscilation | |
JPS5221754A (en) | Oscillation circuit | |
JPS5426646A (en) | Current miller circuit | |
JPS5333030A (en) | Multi-mode vibrator | |
JPS5342585A (en) | Crystal oscillator | |
JPS52109889A (en) | Diapason type piezo electric vibrator | |
JPS5234660A (en) | Photo-logic element | |
JPS5372492A (en) | Piezo-electric vibrator | |
JPS52137221A (en) | Memory device | |
JPS52149487A (en) | Crystal vibrator and its production | |
JPS52100884A (en) | Semiconductor laser device | |
JPS5342584A (en) | Crystal oscillator | |
JPS5374426A (en) | Electrostatic recording device | |
JPS5358786A (en) | Injection type laser device | |
JPS5358788A (en) | Injection type laser device | |
JPS5240048A (en) | Amplitude control circuit used for quarts crystal oscillator circuit | |
JPS5280761A (en) | Analog accumulation memory unit | |
JPS52112916A (en) | Stabilizer device | |
JPS5232294A (en) | Laser excitation power supply | |
JPS52128034A (en) | Elastic surface wave device | |
JPS5345959A (en) | Driving method of switching of transistor | |
JPS5373984A (en) | Semiconductor laser and its driving method | |
JPS51135491A (en) | Oscillation axis stabilized laser device | |
JPS5391797A (en) | Atomic analysis apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |