JPS5212057B2 - - Google Patents

Info

Publication number
JPS5212057B2
JPS5212057B2 JP48035904A JP3590473A JPS5212057B2 JP S5212057 B2 JPS5212057 B2 JP S5212057B2 JP 48035904 A JP48035904 A JP 48035904A JP 3590473 A JP3590473 A JP 3590473A JP S5212057 B2 JPS5212057 B2 JP S5212057B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48035904A
Other languages
Japanese (ja)
Other versions
JPS4927167A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4927167A publication Critical patent/JPS4927167A/ja
Publication of JPS5212057B2 publication Critical patent/JPS5212057B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
JP48035904A 1972-05-01 1973-03-30 Expired JPS5212057B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24887472A 1972-05-01 1972-05-01

Publications (2)

Publication Number Publication Date
JPS4927167A JPS4927167A (en:Method) 1974-03-11
JPS5212057B2 true JPS5212057B2 (en:Method) 1977-04-04

Family

ID=22941055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48035904A Expired JPS5212057B2 (en:Method) 1972-05-01 1973-03-30

Country Status (7)

Country Link
US (1) US3776789A (en:Method)
JP (1) JPS5212057B2 (en:Method)
CA (1) CA980919A (en:Method)
DE (1) DE2319286C3 (en:Method)
FR (1) FR2182969B1 (en:Method)
GB (1) GB1371188A (en:Method)
IT (1) IT981200B (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
FR2454183A1 (fr) * 1979-04-10 1980-11-07 Jerphagnon Jean Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure
US7001827B2 (en) * 2003-04-15 2006-02-21 International Business Machines Corporation Semiconductor wafer front side protection
JP2006059535A (ja) * 2004-08-17 2006-03-02 Seiko Instruments Inc 有機電子デバイスの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342652A (en) * 1964-04-02 1967-09-19 Ibm Chemical polishing of a semi-conductor substrate
CA920285A (en) * 1970-11-30 1973-01-30 L. Hartman Robert Extending the operating life of light emitting p-n junction devices

Also Published As

Publication number Publication date
FR2182969A1 (en:Method) 1973-12-14
DE2319286C3 (de) 1981-12-24
FR2182969B1 (en:Method) 1977-04-29
JPS4927167A (en:Method) 1974-03-11
CA980919A (en) 1975-12-30
US3776789A (en) 1973-12-04
DE2319286B2 (de) 1981-02-05
GB1371188A (en) 1974-10-23
IT981200B (it) 1974-10-10
DE2319286A1 (de) 1973-11-22

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