JPS5212057B2 - - Google Patents

Info

Publication number
JPS5212057B2
JPS5212057B2 JP48035904A JP3590473A JPS5212057B2 JP S5212057 B2 JPS5212057 B2 JP S5212057B2 JP 48035904 A JP48035904 A JP 48035904A JP 3590473 A JP3590473 A JP 3590473A JP S5212057 B2 JPS5212057 B2 JP S5212057B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48035904A
Other languages
Japanese (ja)
Other versions
JPS4927167A (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4927167A publication Critical patent/JPS4927167A/ja
Publication of JPS5212057B2 publication Critical patent/JPS5212057B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241III-V semiconductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
JP48035904A 1972-05-01 1973-03-30 Expired JPS5212057B2 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24887472A 1972-05-01 1972-05-01

Publications (2)

Publication Number Publication Date
JPS4927167A JPS4927167A (cg-RX-API-DMAC7.html) 1974-03-11
JPS5212057B2 true JPS5212057B2 (cg-RX-API-DMAC7.html) 1977-04-04

Family

ID=22941055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48035904A Expired JPS5212057B2 (cg-RX-API-DMAC7.html) 1972-05-01 1973-03-30

Country Status (7)

Country Link
US (1) US3776789A (cg-RX-API-DMAC7.html)
JP (1) JPS5212057B2 (cg-RX-API-DMAC7.html)
CA (1) CA980919A (cg-RX-API-DMAC7.html)
DE (1) DE2319286C3 (cg-RX-API-DMAC7.html)
FR (1) FR2182969B1 (cg-RX-API-DMAC7.html)
GB (1) GB1371188A (cg-RX-API-DMAC7.html)
IT (1) IT981200B (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
FR2454183A1 (fr) * 1979-04-10 1980-11-07 Jerphagnon Jean Structure de type oxyde-semi-conducteur dans laquelle le semi-conducteur est un compose iii-v et procede de fabrication de cette structure
US7001827B2 (en) * 2003-04-15 2006-02-21 International Business Machines Corporation Semiconductor wafer front side protection
JP2006059535A (ja) * 2004-08-17 2006-03-02 Seiko Instruments Inc 有機電子デバイスの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342652A (en) * 1964-04-02 1967-09-19 Ibm Chemical polishing of a semi-conductor substrate
CA920285A (en) * 1970-11-30 1973-01-30 L. Hartman Robert Extending the operating life of light emitting p-n junction devices

Also Published As

Publication number Publication date
US3776789A (en) 1973-12-04
JPS4927167A (cg-RX-API-DMAC7.html) 1974-03-11
DE2319286C3 (de) 1981-12-24
FR2182969A1 (cg-RX-API-DMAC7.html) 1973-12-14
DE2319286B2 (de) 1981-02-05
CA980919A (en) 1975-12-30
IT981200B (it) 1974-10-10
DE2319286A1 (de) 1973-11-22
FR2182969B1 (cg-RX-API-DMAC7.html) 1977-04-29
GB1371188A (en) 1974-10-23

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