JPS52114567A - Reaction furnace - Google Patents
Reaction furnaceInfo
- Publication number
- JPS52114567A JPS52114567A JP3120676A JP3120676A JPS52114567A JP S52114567 A JPS52114567 A JP S52114567A JP 3120676 A JP3120676 A JP 3120676A JP 3120676 A JP3120676 A JP 3120676A JP S52114567 A JPS52114567 A JP S52114567A
- Authority
- JP
- Japan
- Prior art keywords
- reaction furnace
- reaction
- gas
- inlet
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Tunnel Furnaces (AREA)
Abstract
PURPOSE:To increase reaction capacity of a reaction gas with a sample by equipping at least one inlet for the reaction gas at the center of a reaction furnace which is long sideways and an outlet at each side of the gas inlet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3120676A JPS5912741B2 (en) | 1976-03-24 | 1976-03-24 | reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3120676A JPS5912741B2 (en) | 1976-03-24 | 1976-03-24 | reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52114567A true JPS52114567A (en) | 1977-09-26 |
JPS5912741B2 JPS5912741B2 (en) | 1984-03-26 |
Family
ID=12324934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3120676A Expired JPS5912741B2 (en) | 1976-03-24 | 1976-03-24 | reactor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5912741B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6176814U (en) * | 1984-10-24 | 1986-05-23 |
-
1976
- 1976-03-24 JP JP3120676A patent/JPS5912741B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5912741B2 (en) | 1984-03-26 |
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