JPS5193878A - - Google Patents

Info

Publication number
JPS5193878A
JPS5193878A JP1880075A JP1880075A JPS5193878A JP S5193878 A JPS5193878 A JP S5193878A JP 1880075 A JP1880075 A JP 1880075A JP 1880075 A JP1880075 A JP 1880075A JP S5193878 A JPS5193878 A JP S5193878A
Authority
JP
Grant status
Application
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1880075A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

JP1880075A 1975-02-17 1975-02-17 Pending JPS5193878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1880075A JPS5193878A (en) 1975-02-17 1975-02-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1880075A JPS5193878A (en) 1975-02-17 1975-02-17

Publications (1)

Publication Number Publication Date
JPS5193878A true true JPS5193878A (en) 1976-08-17

Family

ID=11981653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1880075A Pending JPS5193878A (en) 1975-02-17 1975-02-17

Country Status (1)

Country Link
JP (1) JPS5193878A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2753613A1 (en) * 1976-12-01 1978-06-08 Hitachi Ltd Insulated gate field effect transistor
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
US4270137A (en) * 1977-12-15 1981-05-26 U.S. Philips Corporation Field-effect devices
JPS58142579A (en) * 1982-02-18 1983-08-24 Mitsubishi Electric Corp Mos transistor
JPS6420666A (en) * 1987-06-22 1989-01-24 Sgs Thomson Microelectronics Power mos transistor structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2753613A1 (en) * 1976-12-01 1978-06-08 Hitachi Ltd Insulated gate field effect transistor
US4172260A (en) * 1976-12-01 1979-10-23 Hitachi, Ltd. Insulated gate field effect transistor with source field shield extending over multiple region channel
US4270137A (en) * 1977-12-15 1981-05-26 U.S. Philips Corporation Field-effect devices
JPS54121681A (en) * 1978-03-15 1979-09-20 Hitachi Ltd Nis-type semiconductor device
JPS58142579A (en) * 1982-02-18 1983-08-24 Mitsubishi Electric Corp Mos transistor
JPS6420666A (en) * 1987-06-22 1989-01-24 Sgs Thomson Microelectronics Power mos transistor structure

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