JPS5193878A - - Google Patents
Info
- Publication number
- JPS5193878A JPS5193878A JP50018800A JP1880075A JPS5193878A JP S5193878 A JPS5193878 A JP S5193878A JP 50018800 A JP50018800 A JP 50018800A JP 1880075 A JP1880075 A JP 1880075A JP S5193878 A JPS5193878 A JP S5193878A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50018800A JPS5193878A (de) | 1975-02-17 | 1975-02-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50018800A JPS5193878A (de) | 1975-02-17 | 1975-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5193878A true JPS5193878A (de) | 1976-08-17 |
Family
ID=11981653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50018800A Pending JPS5193878A (de) | 1975-02-17 | 1975-02-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5193878A (de) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2753613A1 (de) * | 1976-12-01 | 1978-06-08 | Hitachi Ltd | Isolierschicht-feldeffekttransistor |
| JPS54121681A (en) * | 1978-03-15 | 1979-09-20 | Hitachi Ltd | Nis-type semiconductor device |
| US4270137A (en) * | 1977-12-15 | 1981-05-26 | U.S. Philips Corporation | Field-effect devices |
| JPS58142579A (ja) * | 1982-02-18 | 1983-08-24 | Mitsubishi Electric Corp | Ｍｏｓトランジスタ |
| JPS6420666A (en) * | 1987-06-22 | 1989-01-24 | Sgs Thomson Microelectronics | Power mos transistor structure |
-
1975
- 1975-02-17 JP JP50018800A patent/JPS5193878A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2753613A1 (de) * | 1976-12-01 | 1978-06-08 | Hitachi Ltd | Isolierschicht-feldeffekttransistor |
| US4172260A (en) * | 1976-12-01 | 1979-10-23 | Hitachi, Ltd. | Insulated gate field effect transistor with source field shield extending over multiple region channel |
| US4270137A (en) * | 1977-12-15 | 1981-05-26 | U.S. Philips Corporation | Field-effect devices |
| JPS54121681A (en) * | 1978-03-15 | 1979-09-20 | Hitachi Ltd | Nis-type semiconductor device |
| JPS58142579A (ja) * | 1982-02-18 | 1983-08-24 | Mitsubishi Electric Corp | Ｍｏｓトランジスタ |
| JPS6420666A (en) * | 1987-06-22 | 1989-01-24 | Sgs Thomson Microelectronics | Power mos transistor structure |