JPS5190285A - - Google Patents
Info
- Publication number
- JPS5190285A JPS5190285A JP50015070A JP1507075A JPS5190285A JP S5190285 A JPS5190285 A JP S5190285A JP 50015070 A JP50015070 A JP 50015070A JP 1507075 A JP1507075 A JP 1507075A JP S5190285 A JPS5190285 A JP S5190285A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50015070A JPS5190285A (fi) | 1975-02-05 | 1975-02-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50015070A JPS5190285A (fi) | 1975-02-05 | 1975-02-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5190285A true JPS5190285A (fi) | 1976-08-07 |
Family
ID=11878579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50015070A Pending JPS5190285A (fi) | 1975-02-05 | 1975-02-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5190285A (fi) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0521460A (ja) * | 1990-12-25 | 1993-01-29 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| US6838698B1 (en) | 1990-12-25 | 2005-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having source/channel or drain/channel boundary regions |
| US7253437B2 (en) | 1990-12-25 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a thin film transistor |
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1975
- 1975-02-05 JP JP50015070A patent/JPS5190285A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0521460A (ja) * | 1990-12-25 | 1993-01-29 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| US6838698B1 (en) | 1990-12-25 | 2005-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having source/channel or drain/channel boundary regions |
| US7253437B2 (en) | 1990-12-25 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a thin film transistor |
| US7375375B2 (en) | 1990-12-25 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |