JPS5180160A - Ishitsukibanjoheno handotaisokeiseihoho - Google Patents
Ishitsukibanjoheno handotaisokeiseihohoInfo
- Publication number
- JPS5180160A JPS5180160A JP467675A JP467675A JPS5180160A JP S5180160 A JPS5180160 A JP S5180160A JP 467675 A JP467675 A JP 467675A JP 467675 A JP467675 A JP 467675A JP S5180160 A JPS5180160 A JP S5180160A
- Authority
- JP
- Japan
- Prior art keywords
- ishitsukibanjoheno
- handotaisokeiseihoho
- ishitsukibanjoheno handotaisokeiseihoho
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50004676A JPS6012775B2 (en) | 1975-01-09 | 1975-01-09 | Method for forming a single crystal semiconductor layer on a foreign substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50004676A JPS6012775B2 (en) | 1975-01-09 | 1975-01-09 | Method for forming a single crystal semiconductor layer on a foreign substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5180160A true JPS5180160A (en) | 1976-07-13 |
JPS6012775B2 JPS6012775B2 (en) | 1985-04-03 |
Family
ID=11590488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50004676A Expired JPS6012775B2 (en) | 1975-01-09 | 1975-01-09 | Method for forming a single crystal semiconductor layer on a foreign substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6012775B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558520A (en) * | 1978-10-23 | 1980-05-01 | Philips Nv | Method of manufacturing semiconductor device |
WO1998058408A1 (en) * | 1997-06-19 | 1998-12-23 | Asahi Kasei Kogyo Kabushiki Kaisha | Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same |
WO2000019500A1 (en) * | 1998-09-25 | 2000-04-06 | Asahi Kasei Kabushiki Kaisha | Semiconductor substrate and its production method, semiconductor device comprising the same and its production method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03100672U (en) * | 1990-02-05 | 1991-10-21 |
-
1975
- 1975-01-09 JP JP50004676A patent/JPS6012775B2/en not_active Expired
Non-Patent Citations (2)
Title |
---|
NIKKEI ELECTRONICS#M7=1974 * |
SEMICONDUCTOR SILI * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558520A (en) * | 1978-10-23 | 1980-05-01 | Philips Nv | Method of manufacturing semiconductor device |
JPS5633856B2 (en) * | 1978-10-23 | 1981-08-06 | ||
WO1998058408A1 (en) * | 1997-06-19 | 1998-12-23 | Asahi Kasei Kogyo Kabushiki Kaisha | Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same |
US6528387B1 (en) | 1997-06-19 | 2003-03-04 | Asahi Kasei Kabushiki Kaisha | SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same |
WO2000019500A1 (en) * | 1998-09-25 | 2000-04-06 | Asahi Kasei Kabushiki Kaisha | Semiconductor substrate and its production method, semiconductor device comprising the same and its production method |
US6768175B1 (en) | 1998-09-25 | 2004-07-27 | Asahi Kasei Kabushiki Kaisha | Semiconductor substrate and its production method, semiconductor device comprising the same and its production method |
Also Published As
Publication number | Publication date |
---|---|
JPS6012775B2 (en) | 1985-04-03 |
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