JPS517985B2 - - Google Patents

Info

Publication number
JPS517985B2
JPS517985B2 JP48061060A JP6106073A JPS517985B2 JP S517985 B2 JPS517985 B2 JP S517985B2 JP 48061060 A JP48061060 A JP 48061060A JP 6106073 A JP6106073 A JP 6106073A JP S517985 B2 JPS517985 B2 JP S517985B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48061060A
Other languages
Japanese (ja)
Other versions
JPS4944686A (US06589383-20030708-C00041.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4944686A publication Critical patent/JPS4944686A/ja
Publication of JPS517985B2 publication Critical patent/JPS517985B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/101Semiconductor Hall-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
JP48061060A 1972-06-01 1973-06-01 Expired JPS517985B2 (US06589383-20030708-C00041.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7207395,A NL173335C (nl) 1972-06-01 1972-06-01 Hall-element.

Publications (2)

Publication Number Publication Date
JPS4944686A JPS4944686A (US06589383-20030708-C00041.png) 1974-04-26
JPS517985B2 true JPS517985B2 (US06589383-20030708-C00041.png) 1976-03-12

Family

ID=19816184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48061060A Expired JPS517985B2 (US06589383-20030708-C00041.png) 1972-06-01 1973-06-01

Country Status (12)

Country Link
US (1) US3823354A (US06589383-20030708-C00041.png)
JP (1) JPS517985B2 (US06589383-20030708-C00041.png)
AT (1) AT343718B (US06589383-20030708-C00041.png)
AU (1) AU474234B2 (US06589383-20030708-C00041.png)
BE (1) BE800327A (US06589383-20030708-C00041.png)
CA (1) CA994476A (US06589383-20030708-C00041.png)
CH (1) CH566080A5 (US06589383-20030708-C00041.png)
DE (1) DE2326731C3 (US06589383-20030708-C00041.png)
FR (1) FR2186763B1 (US06589383-20030708-C00041.png)
GB (1) GB1426590A (US06589383-20030708-C00041.png)
IT (1) IT986380B (US06589383-20030708-C00041.png)
NL (1) NL173335C (US06589383-20030708-C00041.png)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170069C (nl) * 1973-06-18 1982-09-16 Philips Nv Halfgeleiderinrichting met hall-element.
JPS5220317B2 (US06589383-20030708-C00041.png) * 1974-12-25 1977-06-02
US3994010A (en) * 1975-03-27 1976-11-23 Honeywell Inc. Hall effect elements
DE2749763A1 (de) * 1976-11-05 1978-05-11 Tokyo Shibaura Electric Co Multiplizierschaltung
US4141026A (en) * 1977-02-02 1979-02-20 Texas Instruments Incorporated Hall effect generator
EP0001160B1 (en) * 1977-09-08 1981-04-29 THE GENERAL ELECTRIC COMPANY, p.l.c. Planar pnpn semiconductor device of circular geometry and magnetic field sensor using such a device
US4599634A (en) * 1978-08-15 1986-07-08 National Semiconductor Corporation Stress insensitive integrated circuit
US4253107A (en) * 1978-10-06 1981-02-24 Sprague Electric Company Integrated circuit with ion implanted hall-cell
DE3001772A1 (de) * 1980-01-18 1981-07-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US4584552A (en) * 1982-03-26 1986-04-22 Pioneer Electronic Corporation Hall element with improved composite substrate
EP0162165A3 (en) * 1983-06-10 1986-07-16 Texas Instruments Incorporated A Hall effect device and method for fabricating such a device
US4660065A (en) * 1983-06-10 1987-04-21 Texas Instruments Incorporated Hall effect device with surface potential shielding layer
CH662905A5 (de) * 1983-12-19 1987-10-30 Landis & Gyr Ag Integrierbares hallelement.
US4578692A (en) * 1984-04-16 1986-03-25 Sprague Electric Company Integrated circuit with stress isolated Hall element
CH669068A5 (de) * 1986-04-29 1989-02-15 Landis & Gyr Ag Integrierbares hallelement.
US4908527A (en) * 1988-09-08 1990-03-13 Xolox Corporation Hall-type transducing device
DE19857275A1 (de) * 1998-12-11 2000-06-15 Johannes V Kluge Integrierbarer Magnetfeldsensor aus Halbleitermaterial
US7205622B2 (en) * 2005-01-20 2007-04-17 Honeywell International Inc. Vertical hall effect device
US9007060B2 (en) 2011-07-21 2015-04-14 Infineon Technologies Ag Electronic device with ring-connected hall effect regions
US8988072B2 (en) 2011-07-21 2015-03-24 Infineon Technologies Ag Vertical hall sensor with high electrical symmetry
US9103868B2 (en) 2011-09-15 2015-08-11 Infineon Technologies Ag Vertical hall sensors
DE102012216388A1 (de) 2011-09-16 2013-03-21 Infineon Technologies Ag Hall-sensoren mit erfassungsknoten mit signaleinprägung
US9312472B2 (en) 2012-02-20 2016-04-12 Infineon Technologies Ag Vertical hall device with electrical 180 degree symmetry
US9018948B2 (en) 2012-07-26 2015-04-28 Infineon Technologies Ag Hall sensors and sensing methods
US9170307B2 (en) 2012-09-26 2015-10-27 Infineon Technologies Ag Hall sensors and sensing methods
US9252354B2 (en) 2013-01-29 2016-02-02 Infineon Technologies Ag Vertical hall device with highly conductive opposite face node for electrically connecting first and second hall effect regions
US9164155B2 (en) 2013-01-29 2015-10-20 Infineon Technologies Ag Systems and methods for offset reduction in sensor devices and systems
US9605983B2 (en) * 2014-06-09 2017-03-28 Infineon Technologies Ag Sensor device and sensor arrangement
US9823168B2 (en) 2014-06-27 2017-11-21 Infineon Technologies Ag Auto tire localization systems and methods utilizing a TPMS angular position index

Also Published As

Publication number Publication date
NL173335C (nl) 1984-01-02
NL173335B (nl) 1983-08-01
CH566080A5 (US06589383-20030708-C00041.png) 1975-08-29
CA994476A (en) 1976-08-03
GB1426590A (en) 1976-03-03
ATA468673A (de) 1977-10-15
AU5617373A (en) 1974-11-28
DE2326731C3 (de) 1978-04-20
JPS4944686A (US06589383-20030708-C00041.png) 1974-04-26
NL7207395A (US06589383-20030708-C00041.png) 1973-12-04
US3823354A (en) 1974-07-09
DE2326731A1 (de) 1973-12-20
AT343718B (de) 1978-06-12
FR2186763B1 (US06589383-20030708-C00041.png) 1976-05-28
DE2326731B2 (de) 1977-08-25
AU474234B2 (en) 1976-07-15
FR2186763A1 (US06589383-20030708-C00041.png) 1974-01-11
IT986380B (it) 1975-01-30
BE800327A (fr) 1973-11-30

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