JPS5173924A - Shirikonkaranaru u gatatantai oyobi sonoseizohoho - Google Patents

Shirikonkaranaru u gatatantai oyobi sonoseizohoho

Info

Publication number
JPS5173924A
JPS5173924A JP13863875A JP13863875A JPS5173924A JP S5173924 A JPS5173924 A JP S5173924A JP 13863875 A JP13863875 A JP 13863875A JP 13863875 A JP13863875 A JP 13863875A JP S5173924 A JPS5173924 A JP S5173924A
Authority
JP
Japan
Prior art keywords
shirikonkaranaru
gatatantai
oyobi sonoseizohoho
sonoseizohoho
oyobi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13863875A
Other languages
Japanese (ja)
Inventor
Baumugarutonaa Uerunaa
Roisheru Konraato
Ruhia Ururitsuhi
Shuneraa Manfureeto
Shuretsutaa Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742454592 external-priority patent/DE2454592A1/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5173924A publication Critical patent/JPS5173924A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Bending Of Plates, Rods, And Pipes (AREA)
  • Silicon Compounds (AREA)
JP13863875A 1974-11-18 1975-11-18 Shirikonkaranaru u gatatantai oyobi sonoseizohoho Pending JPS5173924A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19742454592 DE2454592A1 (en) 1974-11-18 1974-11-18 DEVICE FOR DEPOSITING SILICON ON THE SURFACE OF A U-SHAPED SUPPORT BODY MADE OF SILICON
DE19752505540 DE2505540A1 (en) 1974-11-18 1975-02-10 Silicon U-shaped support prodn - used as a substrate for silicon deposition from the gas phase

Publications (1)

Publication Number Publication Date
JPS5173924A true JPS5173924A (en) 1976-06-26

Family

ID=25767990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13863875A Pending JPS5173924A (en) 1974-11-18 1975-11-18 Shirikonkaranaru u gatatantai oyobi sonoseizohoho

Country Status (3)

Country Link
JP (1) JPS5173924A (en)
DE (1) DE2505540A1 (en)
IT (1) IT1048711B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015076105A1 (en) * 2013-11-25 2015-05-28 住友電気工業株式会社 Method for manufacturing bent optical fiber
WO2016002232A1 (en) * 2014-07-04 2016-01-07 信越化学工業株式会社 Silicon core wire for producing polycrystalline silicon rod, and device for producing polycrystalline silicon rod
WO2021024889A1 (en) 2019-08-02 2021-02-11 株式会社トクヤマ Silicon core wire for depositing polycrystalline silicon and production method therefor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015076105A1 (en) * 2013-11-25 2015-05-28 住友電気工業株式会社 Method for manufacturing bent optical fiber
JP2015102663A (en) * 2013-11-25 2015-06-04 住友電気工業株式会社 Manufacturing method of bent optical fiber
WO2016002232A1 (en) * 2014-07-04 2016-01-07 信越化学工業株式会社 Silicon core wire for producing polycrystalline silicon rod, and device for producing polycrystalline silicon rod
JP2016016999A (en) * 2014-07-04 2016-02-01 信越化学工業株式会社 Silicon core wire for polycrystal silicon rod production, and apparatus for producing polycrystal silicon rod
WO2021024889A1 (en) 2019-08-02 2021-02-11 株式会社トクヤマ Silicon core wire for depositing polycrystalline silicon and production method therefor
KR20220043108A (en) 2019-08-02 2022-04-05 가부시키가이샤 도쿠야마 Silicon core wire for polycrystalline silicon precipitation and manufacturing method thereof

Also Published As

Publication number Publication date
DE2505540A1 (en) 1976-08-19
IT1048711B (en) 1980-12-20

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