JPS516509B1 - - Google Patents
Info
- Publication number
- JPS516509B1 JPS516509B1 JP45057318A JP5731870A JPS516509B1 JP S516509 B1 JPS516509 B1 JP S516509B1 JP 45057318 A JP45057318 A JP 45057318A JP 5731870 A JP5731870 A JP 5731870A JP S516509 B1 JPS516509 B1 JP S516509B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP45057318A JPS516509B1 (de) | 1970-07-02 | 1970-07-02 | |
DE19712132886 DE2132886A1 (de) | 1970-07-02 | 1971-07-01 | Bipolarlateraltransistor |
NL7109090A NL7109090A (de) | 1970-07-02 | 1971-07-01 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP45057318A JPS516509B1 (de) | 1970-07-02 | 1970-07-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS516509B1 true JPS516509B1 (de) | 1976-02-28 |
Family
ID=13052210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP45057318A Pending JPS516509B1 (de) | 1970-07-02 | 1970-07-02 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS516509B1 (de) |
DE (1) | DE2132886A1 (de) |
NL (1) | NL7109090A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52157509U (de) * | 1976-05-26 | 1977-11-30 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56131954A (en) * | 1980-03-19 | 1981-10-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1138797A (en) * | 1967-01-03 | 1969-01-01 | Hughes Aircraft Co | Thin film lateral bipolar transistor |
-
1970
- 1970-07-02 JP JP45057318A patent/JPS516509B1/ja active Pending
-
1971
- 1971-07-01 NL NL7109090A patent/NL7109090A/xx unknown
- 1971-07-01 DE DE19712132886 patent/DE2132886A1/de active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1138797A (en) * | 1967-01-03 | 1969-01-01 | Hughes Aircraft Co | Thin film lateral bipolar transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52157509U (de) * | 1976-05-26 | 1977-11-30 |
Also Published As
Publication number | Publication date |
---|---|
DE2132886A1 (de) | 1972-01-13 |
NL7109090A (de) | 1972-01-04 |