JPS5160175A - SHUSEKIKAIRONOSEIZOHOHO - Google Patents

SHUSEKIKAIRONOSEIZOHOHO

Info

Publication number
JPS5160175A
JPS5160175A JP11592675A JP11592675A JPS5160175A JP S5160175 A JPS5160175 A JP S5160175A JP 11592675 A JP11592675 A JP 11592675A JP 11592675 A JP11592675 A JP 11592675A JP S5160175 A JPS5160175 A JP S5160175A
Authority
JP
Japan
Prior art keywords
shusekikaironoseizohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11592675A
Other languages
Japanese (ja)
Inventor
Shupuritsutogerubaa Haintsu
Takakusu Detsuzee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5160175A publication Critical patent/JPS5160175A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP11592675A 1974-09-24 1975-09-25 SHUSEKIKAIRONOSEIZOHOHO Pending JPS5160175A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742445594 DE2445594A1 (en) 1974-09-24 1974-09-24 METHOD OF MANUFACTURING INTEGRATED CIRCUITS

Publications (1)

Publication Number Publication Date
JPS5160175A true JPS5160175A (en) 1976-05-25

Family

ID=5926596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11592675A Pending JPS5160175A (en) 1974-09-24 1975-09-25 SHUSEKIKAIRONOSEIZOHOHO

Country Status (5)

Country Link
JP (1) JPS5160175A (en)
DE (1) DE2445594A1 (en)
FR (1) FR2286504A1 (en)
GB (1) GB1514288A (en)
IT (1) IT1042658B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3218309A1 (en) * 1982-05-14 1983-11-17 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED MOS FIELD EFFECT TRANSISTORS WITH AN ADDITIONAL CIRCUIT LEVEL, MADE OF METAL SILICIDES

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2040180B2 (en) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) METHOD FOR PREVENTING MECHANICAL BREAKAGE OF A THIN ELECTRICALLY CONDUCTIVE LAYER COVERING THE SURFACE OF A SEMICONDUCTOR BODY
US3833919A (en) * 1972-10-12 1974-09-03 Ncr Multilevel conductor structure and method

Also Published As

Publication number Publication date
IT1042658B (en) 1980-01-30
FR2286504B1 (en) 1978-04-07
GB1514288A (en) 1978-06-14
FR2286504A1 (en) 1976-04-23
DE2445594A1 (en) 1976-04-08

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