JPS5157272A - - Google Patents

Info

Publication number
JPS5157272A
JPS5157272A JP49131685A JP13168574A JPS5157272A JP S5157272 A JPS5157272 A JP S5157272A JP 49131685 A JP49131685 A JP 49131685A JP 13168574 A JP13168574 A JP 13168574A JP S5157272 A JPS5157272 A JP S5157272A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49131685A
Other languages
Japanese (ja)
Other versions
JPS5853521B2 (ja
Inventor
Tadao Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP49131685A priority Critical patent/JPS5853521B2/ja
Priority to CA238,780A priority patent/CA1034217A/en
Priority to US05/628,147 priority patent/US4021751A/en
Priority to AU86511/75A priority patent/AU492898B2/en
Priority to GB46717/75A priority patent/GB1502905A/en
Priority to DE2551279A priority patent/DE2551279C2/de
Priority to BR7507568*A priority patent/BR7507568A/pt
Priority to NLAANVRAGE7513422,A priority patent/NL189104C/xx
Priority to FR7535041A priority patent/FR2291641A1/fr
Publication of JPS5157272A publication Critical patent/JPS5157272A/ja
Publication of JPS5853521B2 publication Critical patent/JPS5853521B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45376Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using junction FET transistors as the active amplifying circuit
    • H03F3/45408Complementary long tailed pairs having parallel inputs and being supplied in parallel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/185Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices
    • H03F3/1855Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26Push-pull amplifiers; Phase-splitters therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3044Junction FET SEPP output stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45376Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using junction FET transistors as the active amplifying circuit
    • H03F3/45466Complementary non-cross coupled types
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/516Some amplifier stages of an amplifier use supply voltages of different value
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45498Indexing scheme relating to differential amplifiers the CSC comprising only resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45702Indexing scheme relating to differential amplifiers the LC comprising two resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
JP49131685A 1974-11-15 1974-11-15 デンリヨクゾウフクカイロ Expired JPS5853521B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP49131685A JPS5853521B2 (ja) 1974-11-15 1974-11-15 デンリヨクゾウフクカイロ
CA238,780A CA1034217A (en) 1974-11-15 1975-10-31 Field effect transistor amplifier
US05/628,147 US4021751A (en) 1974-11-15 1975-11-03 Field effect transistor amplifier
AU86511/75A AU492898B2 (en) 1974-11-15 1975-11-11 Field effect transistor amplifier
GB46717/75A GB1502905A (en) 1974-11-15 1975-11-12 Field effect transistor amplifiers
DE2551279A DE2551279C2 (de) 1974-11-15 1975-11-14 Feldeffekttransistor-Verstärker
BR7507568*A BR7507568A (pt) 1974-11-15 1975-11-14 Amplificador transistorizado de efeito de campo aperfeicoado
NLAANVRAGE7513422,A NL189104C (nl) 1974-11-15 1975-11-17 Transistorversterker.
FR7535041A FR2291641A1 (fr) 1974-11-15 1975-11-17 Amplificateur a transistors a effet de champ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49131685A JPS5853521B2 (ja) 1974-11-15 1974-11-15 デンリヨクゾウフクカイロ

Publications (2)

Publication Number Publication Date
JPS5157272A true JPS5157272A (US07922777-20110412-C00004.png) 1976-05-19
JPS5853521B2 JPS5853521B2 (ja) 1983-11-30

Family

ID=15063814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49131685A Expired JPS5853521B2 (ja) 1974-11-15 1974-11-15 デンリヨクゾウフクカイロ

Country Status (8)

Country Link
US (1) US4021751A (US07922777-20110412-C00004.png)
JP (1) JPS5853521B2 (US07922777-20110412-C00004.png)
BR (1) BR7507568A (US07922777-20110412-C00004.png)
CA (1) CA1034217A (US07922777-20110412-C00004.png)
DE (1) DE2551279C2 (US07922777-20110412-C00004.png)
FR (1) FR2291641A1 (US07922777-20110412-C00004.png)
GB (1) GB1502905A (US07922777-20110412-C00004.png)
NL (1) NL189104C (US07922777-20110412-C00004.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108538828A (zh) * 2017-03-01 2018-09-14 三星电子株式会社 使用单极半导体器件的逻辑门、集成电路和数字电路

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117415A (en) * 1977-04-14 1978-09-26 Rca Corporation Bridge amplifiers employing complementary transistors
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
US4159450A (en) * 1978-05-22 1979-06-26 Rca Corporation Complementary-FET driver circuitry for push-pull class B transistor amplifiers
JPS55107307A (en) * 1979-02-08 1980-08-18 Pioneer Electronic Corp Transistor circuit
US4249095A (en) * 1979-02-26 1981-02-03 Rca Corporation Comparator, sense amplifier
DE2951928C2 (de) * 1979-12-21 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Transistorgegentaktendstufe
US4354151A (en) * 1980-06-12 1982-10-12 Rca Corporation Voltage divider circuits
US4403198A (en) * 1981-03-27 1983-09-06 General Electric Company Biasing circuit for MOSFET power amplifiers
DE3480044D1 (en) * 1984-12-28 1989-11-09 Ibm Constant biasing circuit and operational amplifier using said circuit
IT1185935B (it) * 1985-09-18 1987-11-18 Sgs Microelettronica Spa Stradio di uscita cmos a grande escursione di tensione e con stabilizzazione della corrente di rifoso
US5959475A (en) * 1998-01-13 1999-09-28 Xerox Corporation Complementary push-pull CMOS source follower analog video buffer
JP3650281B2 (ja) * 1999-05-07 2005-05-18 セイコーインスツル株式会社 半導体装置
US6320422B1 (en) * 1999-11-23 2001-11-20 National Semiconductor Corporation Complementary source coupled logic
US6917245B2 (en) * 2000-09-12 2005-07-12 Silicon Laboratories, Inc. Absolute power detector
US6549071B1 (en) * 2000-09-12 2003-04-15 Silicon Laboratories, Inc. Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices
US6828859B2 (en) * 2001-08-17 2004-12-07 Silicon Laboratories, Inc. Method and apparatus for protecting devices in an RF power amplifier
US6894565B1 (en) * 2002-12-03 2005-05-17 Silicon Laboratories, Inc. Fast settling power amplifier regulator
US6897730B2 (en) * 2003-03-04 2005-05-24 Silicon Laboratories Inc. Method and apparatus for controlling the output power of a power amplifier
US7405620B2 (en) * 2006-07-20 2008-07-29 International Business Machines Corporation Differential amplifier and method
WO2009063373A2 (en) * 2007-11-12 2009-05-22 Nxp B.V. Signal processor comprising an amplifier
WO2009063372A1 (en) * 2007-11-12 2009-05-22 Nxp B.V. Thermal stress reduction
WO2015198804A1 (ja) * 2014-06-26 2015-12-30 ソニー株式会社 送信装置および通信システム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541049B2 (US07922777-20110412-C00004.png) * 1973-09-28 1980-10-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108538828A (zh) * 2017-03-01 2018-09-14 三星电子株式会社 使用单极半导体器件的逻辑门、集成电路和数字电路

Also Published As

Publication number Publication date
BR7507568A (pt) 1976-08-10
NL189104C (nl) 1993-01-04
CA1034217A (en) 1978-07-04
NL7513422A (nl) 1976-05-18
AU8651175A (en) 1977-05-19
NL189104B (nl) 1992-08-03
US4021751A (en) 1977-05-03
DE2551279C2 (de) 1984-08-16
FR2291641B1 (US07922777-20110412-C00004.png) 1980-01-11
FR2291641A1 (fr) 1976-06-11
JPS5853521B2 (ja) 1983-11-30
GB1502905A (en) 1978-03-08
DE2551279A1 (de) 1976-05-20

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