JPS5147574B2 - - Google Patents

Info

Publication number
JPS5147574B2
JPS5147574B2 JP48123002A JP12300273A JPS5147574B2 JP S5147574 B2 JPS5147574 B2 JP S5147574B2 JP 48123002 A JP48123002 A JP 48123002A JP 12300273 A JP12300273 A JP 12300273A JP S5147574 B2 JPS5147574 B2 JP S5147574B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48123002A
Other languages
Japanese (ja)
Other versions
JPS4990082A (US06650917-20031118-M00005.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4990082A publication Critical patent/JPS4990082A/ja
Publication of JPS5147574B2 publication Critical patent/JPS5147574B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/085Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312Organic layers, e.g. photoresist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
JP48123002A 1972-12-11 1973-11-02 Expired JPS5147574B2 (US06650917-20031118-M00005.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00314050A US3827908A (en) 1972-12-11 1972-12-11 Method for improving photoresist adherence

Publications (2)

Publication Number Publication Date
JPS4990082A JPS4990082A (US06650917-20031118-M00005.png) 1974-08-28
JPS5147574B2 true JPS5147574B2 (US06650917-20031118-M00005.png) 1976-12-15

Family

ID=23218346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48123002A Expired JPS5147574B2 (US06650917-20031118-M00005.png) 1972-12-11 1973-11-02

Country Status (8)

Country Link
US (1) US3827908A (US06650917-20031118-M00005.png)
JP (1) JPS5147574B2 (US06650917-20031118-M00005.png)
CA (1) CA1002820A (US06650917-20031118-M00005.png)
CH (1) CH585919A5 (US06650917-20031118-M00005.png)
FR (1) FR2210013B1 (US06650917-20031118-M00005.png)
GB (1) GB1451375A (US06650917-20031118-M00005.png)
IT (1) IT1001747B (US06650917-20031118-M00005.png)
NL (1) NL7314991A (US06650917-20031118-M00005.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0241459Y2 (US06650917-20031118-M00005.png) * 1984-06-09 1990-11-05

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4497889A (en) * 1972-03-16 1985-02-05 E. I. Du Pont De Nemours And Company Release compound in negative acting photopolymerizable element
US4259430A (en) * 1974-05-01 1981-03-31 International Business Machines Corporation Photoresist O-quinone diazide containing composition and resist mask formation process
DE2529054C2 (de) * 1975-06-30 1982-04-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Herstellung eines zur Vorlage negativen Resistbildes
DE2547905C2 (de) * 1975-10-25 1985-11-21 Hoechst Ag, 6230 Frankfurt Lichtempfindliches Aufzeichnungsmaterial
DE2626419C2 (de) * 1976-06-12 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Lichtempfindliches Gemisch
US4173470A (en) * 1977-11-09 1979-11-06 Bell Telephone Laboratories, Incorporated Novolak photoresist composition and preparation thereof
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
US4485167A (en) * 1980-10-06 1984-11-27 E. I. Du Pont De Nemours And Company Aqueous developable photopolymerizable elements
US4517281A (en) * 1980-10-06 1985-05-14 E. I. Du Pont De Nemours And Company Development process for aqueous developable photopolymerizable elements
DE3277343D1 (en) * 1982-06-14 1987-10-22 Ibm Deutschland Method of adjusting the edge angle in polysilicon
US4431685A (en) * 1982-07-02 1984-02-14 International Business Machines Corporation Decreasing plated metal defects
US4604305A (en) * 1982-09-28 1986-08-05 Exxon Research And Engineering Co. Improvements in contrast of a positive polymer resist having a glass transition temperature through control of the molecular weight distribution and prebaked temperature
US4608281A (en) * 1982-09-28 1986-08-26 Exxon Research And Engineering Co. Improvements in sensitivity of a positive polymer resist having a glass transition temperature through control of a molecular weight distribution and prebaked temperature
NL8203980A (nl) * 1982-10-15 1984-05-01 Philips Nv Werkwijze voor de fotolithografische behandeling van een substraat.
US4464458A (en) * 1982-12-30 1984-08-07 International Business Machines Corporation Process for forming resist masks utilizing O-quinone diazide and pyrene
US4564584A (en) * 1983-12-30 1986-01-14 Ibm Corporation Photoresist lift-off process for fabricating semiconductor devices
US4732858A (en) * 1986-09-17 1988-03-22 Brewer Science, Inc. Adhesion promoting product and process for treating an integrated circuit substrate
JPH07120914A (ja) * 1993-10-21 1995-05-12 Hoechst Japan Ltd ポジ型ホトレジスト組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0241459Y2 (US06650917-20031118-M00005.png) * 1984-06-09 1990-11-05

Also Published As

Publication number Publication date
CA1002820A (en) 1977-01-04
JPS4990082A (US06650917-20031118-M00005.png) 1974-08-28
FR2210013A1 (US06650917-20031118-M00005.png) 1974-07-05
DE2361436B2 (de) 1977-05-05
CH585919A5 (US06650917-20031118-M00005.png) 1977-03-15
US3827908A (en) 1974-08-06
IT1001747B (it) 1976-04-30
NL7314991A (US06650917-20031118-M00005.png) 1974-06-13
GB1451375A (en) 1976-09-29
DE2361436A1 (de) 1974-06-12
FR2210013B1 (US06650917-20031118-M00005.png) 1977-09-09

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