JPS5134268B2 - - Google Patents
Info
- Publication number
- JPS5134268B2 JPS5134268B2 JP47070225A JP7022572A JPS5134268B2 JP S5134268 B2 JPS5134268 B2 JP S5134268B2 JP 47070225 A JP47070225 A JP 47070225A JP 7022572 A JP7022572 A JP 7022572A JP S5134268 B2 JPS5134268 B2 JP S5134268B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/922—Diffusion along grain boundaries
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47070225A JPS5134268B2 (US06815460-20041109-C00097.png) | 1972-07-13 | 1972-07-13 | |
| DE19732335503 DE2335503A1 (de) | 1972-07-13 | 1973-07-12 | Halbleiteranordnung und verfahren zu ihrer herstellung |
| GB3338973A GB1436255A (en) | 1972-07-13 | 1973-07-12 | Semi-conductor device and method of making the same |
| US378449A US3925803A (en) | 1972-07-13 | 1973-07-12 | Oriented polycrystal jfet |
| CA176,348A CA984975A (en) | 1972-07-13 | 1973-07-12 | Semiconductor device |
| AT622273A AT352783B (de) | 1972-07-13 | 1973-07-13 | Als feldeffekttransistor betreibbare mehrkanal-halbleiteranordnung mit laenglichen halbleiterkristallen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47070225A JPS5134268B2 (US06815460-20041109-C00097.png) | 1972-07-13 | 1972-07-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4929580A JPS4929580A (US06815460-20041109-C00097.png) | 1974-03-16 |
| JPS5134268B2 true JPS5134268B2 (US06815460-20041109-C00097.png) | 1976-09-25 |
Family
ID=13425382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47070225A Expired JPS5134268B2 (US06815460-20041109-C00097.png) | 1972-07-13 | 1972-07-13 |
Country Status (6)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329551B2 (US06815460-20041109-C00097.png) * | 1974-08-19 | 1978-08-22 | ||
| US4107724A (en) * | 1974-12-17 | 1978-08-15 | U.S. Philips Corporation | Surface controlled field effect solid state device |
| DE2926741C2 (de) * | 1979-07-03 | 1982-09-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekt-Transistor und Verfahren zu seiner Herstellung |
| JPS56116670A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| US4427457A (en) | 1981-04-07 | 1984-01-24 | Oregon Graduate Center | Method of making depthwise-oriented integrated circuit capacitors |
| WO1986007148A1 (en) * | 1985-05-20 | 1986-12-04 | The Regents Of The University Of California | Differential imaging device |
| US5362972A (en) * | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
| US5098862A (en) * | 1990-11-07 | 1992-03-24 | Gte Laboratories Incorporated | Method of making ohmic electrical contact to a matrix of semiconductor material |
| US5332910A (en) * | 1991-03-22 | 1994-07-26 | Hitachi, Ltd. | Semiconductor optical device with nanowhiskers |
| TW386238B (en) | 1997-01-20 | 2000-04-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| DE19840032C1 (de) * | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
| US6828609B2 (en) * | 2001-11-09 | 2004-12-07 | Infineon Technologies Ag | High-voltage semiconductor component |
| US6819089B2 (en) * | 2001-11-09 | 2004-11-16 | Infineon Technologies Ag | Power factor correction circuit with high-voltage semiconductor component |
| US7053404B2 (en) * | 2003-12-05 | 2006-05-30 | Stmicroelectronics S.A. | Active semiconductor component with an optimized surface area |
| US20050121691A1 (en) * | 2003-12-05 | 2005-06-09 | Jean-Luc Morand | Active semiconductor component with a reduced surface area |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2979427A (en) * | 1957-03-18 | 1961-04-11 | Shockley William | Semiconductor device and method of making the same |
| US2954307A (en) * | 1957-03-18 | 1960-09-27 | Shockley William | Grain boundary semiconductor device and method |
| NL249774A (US06815460-20041109-C00097.png) * | 1959-03-26 | |||
| FR1317256A (fr) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
| US3332810A (en) * | 1963-09-28 | 1967-07-25 | Matsushita Electronics Corp | Silicon rectifier device |
| DE1519868B2 (de) * | 1965-03-18 | 1971-07-29 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung |
| US3624467A (en) * | 1969-02-17 | 1971-11-30 | Texas Instruments Inc | Monolithic integrated-circuit structure and method of fabrication |
-
1972
- 1972-07-13 JP JP47070225A patent/JPS5134268B2/ja not_active Expired
-
1973
- 1973-07-12 DE DE19732335503 patent/DE2335503A1/de active Pending
- 1973-07-12 US US378449A patent/US3925803A/en not_active Expired - Lifetime
- 1973-07-12 CA CA176,348A patent/CA984975A/en not_active Expired
- 1973-07-12 GB GB3338973A patent/GB1436255A/en not_active Expired
- 1973-07-13 AT AT622273A patent/AT352783B/de active
Also Published As
| Publication number | Publication date |
|---|---|
| GB1436255A (en) | 1976-05-19 |
| ATA622273A (de) | 1979-03-15 |
| DE2335503A1 (de) | 1974-01-31 |
| CA984975A (en) | 1976-03-02 |
| US3925803A (en) | 1975-12-09 |
| JPS4929580A (US06815460-20041109-C00097.png) | 1974-03-16 |
| AT352783B (de) | 1979-10-10 |
