JPS5132497B2 - - Google Patents
Info
- Publication number
- JPS5132497B2 JPS5132497B2 JP782872A JP782872A JPS5132497B2 JP S5132497 B2 JPS5132497 B2 JP S5132497B2 JP 782872 A JP782872 A JP 782872A JP 782872 A JP782872 A JP 782872A JP S5132497 B2 JPS5132497 B2 JP S5132497B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP782872A JPS5132497B2 (US08197722-20120612-C00093.png) | 1972-01-19 | 1972-01-19 | |
| US05/322,522 US3933538A (en) | 1972-01-18 | 1973-01-10 | Method and apparatus for production of liquid phase epitaxial layers of semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP782872A JPS5132497B2 (US08197722-20120612-C00093.png) | 1972-01-19 | 1972-01-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4877766A JPS4877766A (US08197722-20120612-C00093.png) | 1973-10-19 |
| JPS5132497B2 true JPS5132497B2 (US08197722-20120612-C00093.png) | 1976-09-13 |
Family
ID=11676443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP782872A Expired JPS5132497B2 (US08197722-20120612-C00093.png) | 1972-01-18 | 1972-01-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5132497B2 (US08197722-20120612-C00093.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0117831B2 (US08197722-20120612-C00093.png) * | 1978-08-04 | 1989-04-03 | Toshiaki Hosoi |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5418905B2 (US08197722-20120612-C00093.png) * | 1973-10-24 | 1979-07-11 | ||
| JPS5638054B2 (US08197722-20120612-C00093.png) * | 1974-07-04 | 1981-09-03 | ||
| JPS5720703B2 (US08197722-20120612-C00093.png) * | 1974-12-05 | 1982-04-30 | ||
| JPS51114384A (en) * | 1975-04-01 | 1976-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial crystal growth |
| JPS51114067A (en) * | 1975-04-01 | 1976-10-07 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial growth towards the top of alxga1-xas base |
| JPS52141172A (en) * | 1976-05-20 | 1977-11-25 | Stanley Electric Co Ltd | Continuous liquiddgrowth method |
| JPS6034253B2 (ja) * | 1976-05-21 | 1985-08-07 | 新技術開発事業団 | 液相エピタキシヤル成長方法 |
| JPS554947A (en) * | 1978-06-28 | 1980-01-14 | Fujitsu Ltd | Method of growing liquid phase epitaxial |
| JPS56129319A (en) * | 1980-03-14 | 1981-10-09 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS58148426A (ja) * | 1982-03-01 | 1983-09-03 | Semiconductor Res Found | 成長装置 |
-
1972
- 1972-01-19 JP JP782872A patent/JPS5132497B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0117831B2 (US08197722-20120612-C00093.png) * | 1978-08-04 | 1989-04-03 | Toshiaki Hosoi |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4877766A (US08197722-20120612-C00093.png) | 1973-10-19 |
