JPS5131184B1 - - Google Patents

Info

Publication number
JPS5131184B1
JPS5131184B1 JP47051774A JP5177472A JPS5131184B1 JP S5131184 B1 JPS5131184 B1 JP S5131184B1 JP 47051774 A JP47051774 A JP 47051774A JP 5177472 A JP5177472 A JP 5177472A JP S5131184 B1 JPS5131184 B1 JP S5131184B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47051774A
Other languages
Japanese (ja)
Other versions
JPS4817267A (US07655688-20100202-C00010.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4817267A publication Critical patent/JPS4817267A/ja
Publication of JPS5131184B1 publication Critical patent/JPS5131184B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/927Electromigration resistant metallization

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
JP47051774A 1971-06-30 1972-05-26 Pending JPS5131184B1 (US07655688-20100202-C00010.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00158467A US3830657A (en) 1971-06-30 1971-06-30 Method for making integrated circuit contact structure

Publications (2)

Publication Number Publication Date
JPS4817267A JPS4817267A (US07655688-20100202-C00010.png) 1973-03-05
JPS5131184B1 true JPS5131184B1 (US07655688-20100202-C00010.png) 1976-09-04

Family

ID=22568267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47051774A Pending JPS5131184B1 (US07655688-20100202-C00010.png) 1971-06-30 1972-05-26

Country Status (7)

Country Link
US (1) US3830657A (US07655688-20100202-C00010.png)
JP (1) JPS5131184B1 (US07655688-20100202-C00010.png)
CA (1) CA974660A (US07655688-20100202-C00010.png)
DE (1) DE2228678A1 (US07655688-20100202-C00010.png)
FR (1) FR2143709B1 (US07655688-20100202-C00010.png)
GB (1) GB1386268A (US07655688-20100202-C00010.png)
IT (1) IT953757B (US07655688-20100202-C00010.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61200207U (US07655688-20100202-C00010.png) * 1985-06-03 1986-12-15

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017185A (US07655688-20100202-C00010.png) * 1973-06-12 1975-02-22
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
FR2351502A1 (fr) * 1976-05-14 1977-12-09 Ibm Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees
DE2649773A1 (de) * 1976-10-29 1978-05-11 Bosch Gmbh Robert Halbleiteranordnung
US4333100A (en) * 1978-05-31 1982-06-01 Harris Corporation Aluminum Schottky contacts and silicon-aluminum interconnects for integrated circuits
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
JPS5678130A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Semiconductor device and its manufacture
EP0040629B1 (en) * 1979-11-30 1986-12-30 Western Electric Company, Incorporated Fine-line solid state device
US4360564A (en) * 1981-01-29 1982-11-23 General Electric Company Thin films of low resistance and high coefficients of transmission in the visible spectrum
US4393096A (en) * 1981-11-16 1983-07-12 International Business Machines Corporation Aluminum-copper alloy evaporated films with low via resistance
US4534100A (en) * 1982-06-28 1985-08-13 The United States Of America As Represented By The Secretary Of The Air Force Electrical method of making conductive paths in silicon
US4495222A (en) * 1983-11-07 1985-01-22 Motorola, Inc. Metallization means and method for high temperature applications
US4866505A (en) * 1986-03-19 1989-09-12 Analog Devices, Inc. Aluminum-backed wafer and chip
JP2662446B2 (ja) * 1989-12-11 1997-10-15 キヤノン株式会社 記録ヘッド及び記録ヘッド用素子基板
KR100362751B1 (ko) * 1994-01-19 2003-02-11 소니 가부시끼 가이샤 반도체소자의콘택트홀및그형성방법
US5565707A (en) * 1994-10-31 1996-10-15 International Business Machines Corporation Interconnect structure using a Al2 Cu for an integrated circuit chip
GB2323475B (en) * 1995-11-21 1999-08-11 Lg Electronics Inc Controlling the generation of hillocks in liquid crystal devices
KR0186206B1 (ko) * 1995-11-21 1999-05-01 구자홍 액정표시소자 및 그의 제조방법
DE19621400C2 (de) * 1996-05-28 2000-07-06 Siemens Ag Herstellverfahren für eine Aluminiumschicht oder Aluminiumleiterbahnen
US5926360A (en) * 1996-12-11 1999-07-20 International Business Machines Corporation Metallized oxide structure and fabrication
US6426293B1 (en) * 2001-06-01 2002-07-30 Advanced Micro Devices, Inc. Minimizing resistance and electromigration of interconnect by adjusting anneal temperature and amount of seed layer dopant
US7109556B2 (en) * 2004-11-16 2006-09-19 Texas Instruments Incorporated Method to improve drive current by increasing the effective area of an electrode
US20070164323A1 (en) * 2006-01-18 2007-07-19 Micron Technology, Inc. CMOS gates with intermetallic compound tunable work functions
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
US20090032958A1 (en) * 2007-08-03 2009-02-05 Micron Technology, Inc. Intermetallic conductors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL253834A (US07655688-20100202-C00010.png) * 1959-07-21 1900-01-01
NL303035A (US07655688-20100202-C00010.png) * 1963-02-06 1900-01-01
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3408733A (en) * 1966-03-22 1968-11-05 Bell Telephone Labor Inc Low resistance contact to diffused junction germanium transistor
US3631304A (en) * 1970-05-26 1971-12-28 Cogar Corp Semiconductor device, electrical conductor and fabrication methods therefor
US3631305A (en) * 1970-12-17 1971-12-28 Cogar Corp Improved semiconductor device and electrical conductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61200207U (US07655688-20100202-C00010.png) * 1985-06-03 1986-12-15

Also Published As

Publication number Publication date
IT953757B (it) 1973-08-10
DE2228678A1 (de) 1973-01-18
US3830657A (en) 1974-08-20
CA974660A (en) 1975-09-16
GB1386268A (en) 1975-03-05
FR2143709A1 (US07655688-20100202-C00010.png) 1973-02-09
FR2143709B1 (US07655688-20100202-C00010.png) 1978-03-03
JPS4817267A (US07655688-20100202-C00010.png) 1973-03-05

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