JPS5131184B1 - - Google Patents
Info
- Publication number
- JPS5131184B1 JPS5131184B1 JP47051774A JP5177472A JPS5131184B1 JP S5131184 B1 JPS5131184 B1 JP S5131184B1 JP 47051774 A JP47051774 A JP 47051774A JP 5177472 A JP5177472 A JP 5177472A JP S5131184 B1 JPS5131184 B1 JP S5131184B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/927—Electromigration resistant metallization
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Conductive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00158467A US3830657A (en) | 1971-06-30 | 1971-06-30 | Method for making integrated circuit contact structure |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4817267A JPS4817267A (US07655688-20100202-C00010.png) | 1973-03-05 |
JPS5131184B1 true JPS5131184B1 (US07655688-20100202-C00010.png) | 1976-09-04 |
Family
ID=22568267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47051774A Pending JPS5131184B1 (US07655688-20100202-C00010.png) | 1971-06-30 | 1972-05-26 |
Country Status (7)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61200207U (US07655688-20100202-C00010.png) * | 1985-06-03 | 1986-12-15 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5017185A (US07655688-20100202-C00010.png) * | 1973-06-12 | 1975-02-22 | ||
US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
FR2351502A1 (fr) * | 1976-05-14 | 1977-12-09 | Ibm | Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees |
DE2649773A1 (de) * | 1976-10-29 | 1978-05-11 | Bosch Gmbh Robert | Halbleiteranordnung |
US4333100A (en) * | 1978-05-31 | 1982-06-01 | Harris Corporation | Aluminum Schottky contacts and silicon-aluminum interconnects for integrated circuits |
US4316209A (en) * | 1979-08-31 | 1982-02-16 | International Business Machines Corporation | Metal/silicon contact and methods of fabrication thereof |
JPS5678130A (en) * | 1979-11-30 | 1981-06-26 | Hitachi Ltd | Semiconductor device and its manufacture |
EP0040629B1 (en) * | 1979-11-30 | 1986-12-30 | Western Electric Company, Incorporated | Fine-line solid state device |
US4360564A (en) * | 1981-01-29 | 1982-11-23 | General Electric Company | Thin films of low resistance and high coefficients of transmission in the visible spectrum |
US4393096A (en) * | 1981-11-16 | 1983-07-12 | International Business Machines Corporation | Aluminum-copper alloy evaporated films with low via resistance |
US4534100A (en) * | 1982-06-28 | 1985-08-13 | The United States Of America As Represented By The Secretary Of The Air Force | Electrical method of making conductive paths in silicon |
US4495222A (en) * | 1983-11-07 | 1985-01-22 | Motorola, Inc. | Metallization means and method for high temperature applications |
US4866505A (en) * | 1986-03-19 | 1989-09-12 | Analog Devices, Inc. | Aluminum-backed wafer and chip |
JP2662446B2 (ja) * | 1989-12-11 | 1997-10-15 | キヤノン株式会社 | 記録ヘッド及び記録ヘッド用素子基板 |
KR100362751B1 (ko) * | 1994-01-19 | 2003-02-11 | 소니 가부시끼 가이샤 | 반도체소자의콘택트홀및그형성방법 |
US5565707A (en) * | 1994-10-31 | 1996-10-15 | International Business Machines Corporation | Interconnect structure using a Al2 Cu for an integrated circuit chip |
GB2323475B (en) * | 1995-11-21 | 1999-08-11 | Lg Electronics Inc | Controlling the generation of hillocks in liquid crystal devices |
KR0186206B1 (ko) * | 1995-11-21 | 1999-05-01 | 구자홍 | 액정표시소자 및 그의 제조방법 |
DE19621400C2 (de) * | 1996-05-28 | 2000-07-06 | Siemens Ag | Herstellverfahren für eine Aluminiumschicht oder Aluminiumleiterbahnen |
US5926360A (en) * | 1996-12-11 | 1999-07-20 | International Business Machines Corporation | Metallized oxide structure and fabrication |
US6426293B1 (en) * | 2001-06-01 | 2002-07-30 | Advanced Micro Devices, Inc. | Minimizing resistance and electromigration of interconnect by adjusting anneal temperature and amount of seed layer dopant |
US7109556B2 (en) * | 2004-11-16 | 2006-09-19 | Texas Instruments Incorporated | Method to improve drive current by increasing the effective area of an electrode |
US20070164323A1 (en) * | 2006-01-18 | 2007-07-19 | Micron Technology, Inc. | CMOS gates with intermetallic compound tunable work functions |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7749877B2 (en) * | 2006-03-07 | 2010-07-06 | Siliconix Technology C. V. | Process for forming Schottky rectifier with PtNi silicide Schottky barrier |
US20090032958A1 (en) * | 2007-08-03 | 2009-02-05 | Micron Technology, Inc. | Intermetallic conductors |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL253834A (US07655688-20100202-C00010.png) * | 1959-07-21 | 1900-01-01 | ||
NL303035A (US07655688-20100202-C00010.png) * | 1963-02-06 | 1900-01-01 | ||
US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
US3408733A (en) * | 1966-03-22 | 1968-11-05 | Bell Telephone Labor Inc | Low resistance contact to diffused junction germanium transistor |
US3631304A (en) * | 1970-05-26 | 1971-12-28 | Cogar Corp | Semiconductor device, electrical conductor and fabrication methods therefor |
US3631305A (en) * | 1970-12-17 | 1971-12-28 | Cogar Corp | Improved semiconductor device and electrical conductor |
-
1971
- 1971-06-30 US US00158467A patent/US3830657A/en not_active Expired - Lifetime
-
1972
- 1972-04-26 IT IT23517/72A patent/IT953757B/it active
- 1972-05-26 JP JP47051774A patent/JPS5131184B1/ja active Pending
- 1972-06-08 FR FR7221496A patent/FR2143709B1/fr not_active Expired
- 1972-06-13 DE DE2228678A patent/DE2228678A1/de not_active Withdrawn
- 1972-06-22 CA CA145,359A patent/CA974660A/en not_active Expired
- 1972-06-28 GB GB3020172A patent/GB1386268A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61200207U (US07655688-20100202-C00010.png) * | 1985-06-03 | 1986-12-15 |
Also Published As
Publication number | Publication date |
---|---|
IT953757B (it) | 1973-08-10 |
DE2228678A1 (de) | 1973-01-18 |
US3830657A (en) | 1974-08-20 |
CA974660A (en) | 1975-09-16 |
GB1386268A (en) | 1975-03-05 |
FR2143709A1 (US07655688-20100202-C00010.png) | 1973-02-09 |
FR2143709B1 (US07655688-20100202-C00010.png) | 1978-03-03 |
JPS4817267A (US07655688-20100202-C00010.png) | 1973-03-05 |