JPS5128472B1 - - Google Patents

Info

Publication number
JPS5128472B1
JPS5128472B1 JP46072104A JP7210471A JPS5128472B1 JP S5128472 B1 JPS5128472 B1 JP S5128472B1 JP 46072104 A JP46072104 A JP 46072104A JP 7210471 A JP7210471 A JP 7210471A JP S5128472 B1 JPS5128472 B1 JP S5128472B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46072104A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5128472B1 publication Critical patent/JPS5128472B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
JP46072104A 1970-09-17 1971-09-16 Pending JPS5128472B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7302770A 1970-09-17 1970-09-17

Publications (1)

Publication Number Publication Date
JPS5128472B1 true JPS5128472B1 (enExample) 1976-08-19

Family

ID=22111267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46072104A Pending JPS5128472B1 (enExample) 1970-09-17 1971-09-16

Country Status (10)

Country Link
US (1) US3614553A (enExample)
JP (1) JPS5128472B1 (enExample)
AU (1) AU461443B2 (enExample)
BE (1) BE772710A (enExample)
CA (1) CA922423A (enExample)
DE (1) DE2143028B2 (enExample)
FR (1) FR2106574B1 (enExample)
GB (1) GB1316699A (enExample)
NL (1) NL7112750A (enExample)
SE (1) SE361980B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4296336A (en) * 1979-01-22 1981-10-20 General Semiconductor Co., Inc. Switching circuit and method for avoiding secondary breakdown

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3192082A (en) * 1962-10-23 1965-06-29 Hitachi Ltd Process for the production of npn or pnp junction
US3458367A (en) * 1964-07-18 1969-07-29 Fujitsu Ltd Method of manufacture of superhigh frequency transistor
US3338758A (en) * 1964-12-31 1967-08-29 Fairchild Camera Instr Co Surface gradient protected high breakdown junctions
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
FR1541622A (fr) * 1966-10-24 1968-10-04 Philips Nv Transistor
US3487301A (en) * 1968-03-04 1969-12-30 Ibm Measurement of semiconductor resistivity profiles by measuring voltages,calculating apparent resistivities and applying correction factors

Also Published As

Publication number Publication date
DE2143028A1 (de) 1972-03-23
FR2106574B1 (enExample) 1977-08-05
FR2106574A1 (enExample) 1972-05-05
DE2143028B2 (de) 1976-02-19
NL7112750A (enExample) 1972-03-21
CA922423A (en) 1973-03-06
SE361980B (enExample) 1973-11-19
BE772710A (fr) 1972-01-17
US3614553A (en) 1971-10-19
GB1316699A (en) 1973-05-09
AU3291771A (en) 1973-03-08
AU461443B2 (en) 1975-05-29

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