JPS5122349B2 - - Google Patents
Info
- Publication number
- JPS5122349B2 JPS5122349B2 JP48051512A JP5151273A JPS5122349B2 JP S5122349 B2 JPS5122349 B2 JP S5122349B2 JP 48051512 A JP48051512 A JP 48051512A JP 5151273 A JP5151273 A JP 5151273A JP S5122349 B2 JPS5122349 B2 JP S5122349B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25110572A | 1972-05-08 | 1972-05-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4956594A JPS4956594A (en:Method) | 1974-06-01 |
| JPS5122349B2 true JPS5122349B2 (en:Method) | 1976-07-09 |
Family
ID=22950499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48051512A Expired JPS5122349B2 (en:Method) | 1972-05-08 | 1973-05-08 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5122349B2 (en:Method) |
| CA (1) | CA974658A (en:Method) |
| FR (1) | FR2183882B1 (en:Method) |
| GB (1) | GB1374231A (en:Method) |
| NL (1) | NL7306345A (en:Method) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1392599A (en) * | 1971-07-28 | 1975-04-30 | Mullard Ltd | Semiconductor memory elements |
| JPS5040991B2 (en:Method) * | 1971-09-09 | 1975-12-27 |
-
1973
- 1973-05-04 GB GB2135973A patent/GB1374231A/en not_active Expired
- 1973-05-07 CA CA170,581A patent/CA974658A/en not_active Expired
- 1973-05-07 FR FR7316371A patent/FR2183882B1/fr not_active Expired
- 1973-05-07 NL NL7306345A patent/NL7306345A/xx not_active Application Discontinuation
- 1973-05-08 JP JP48051512A patent/JPS5122349B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA974658A (en) | 1975-09-16 |
| FR2183882B1 (en:Method) | 1977-09-02 |
| GB1374231A (en) | 1974-11-20 |
| FR2183882A1 (en:Method) | 1973-12-21 |
| DE2322490A1 (de) | 1973-11-22 |
| DE2322490B2 (de) | 1975-06-19 |
| JPS4956594A (en:Method) | 1974-06-01 |
| NL7306345A (en:Method) | 1973-11-12 |