JPS5118810B1 - - Google Patents
Info
- Publication number
- JPS5118810B1 JPS5118810B1 JP1653770A JP1653770A JPS5118810B1 JP S5118810 B1 JPS5118810 B1 JP S5118810B1 JP 1653770 A JP1653770 A JP 1653770A JP 1653770 A JP1653770 A JP 1653770A JP S5118810 B1 JPS5118810 B1 JP S5118810B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Circuit For Audible Band Transducer (AREA)
- Control Of Amplification And Gain Control (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1653770A JPS5118810B1 (ja) | 1970-02-24 | 1970-02-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1653770A JPS5118810B1 (ja) | 1970-02-24 | 1970-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5118810B1 true JPS5118810B1 (ja) | 1976-06-12 |
Family
ID=11919001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1653770A Pending JPS5118810B1 (ja) | 1970-02-24 | 1970-02-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5118810B1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190088492A (ko) | 2016-12-02 | 2019-07-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10734413B2 (en) | 2016-07-11 | 2020-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide and semiconductor device |
| US11081326B2 (en) | 2016-07-11 | 2021-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for manufacturing the same |
-
1970
- 1970-02-24 JP JP1653770A patent/JPS5118810B1/ja active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10734413B2 (en) | 2016-07-11 | 2020-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide and semiconductor device |
| US10950634B2 (en) | 2016-07-11 | 2021-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide and semiconductor device |
| US11081326B2 (en) | 2016-07-11 | 2021-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for manufacturing the same |
| US11658185B2 (en) | 2016-07-11 | 2023-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Metal oxide and semiconductor device |
| US11735403B2 (en) | 2016-07-11 | 2023-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for manufacturing the same |
| KR20190088492A (ko) | 2016-12-02 | 2019-07-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US11075075B2 (en) | 2016-12-02 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide with multiple regions |
| US11688602B2 (en) | 2016-12-02 | 2023-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with electrodes over oxide semiconductor |