JPS5116313B2 - - Google Patents
Info
- Publication number
- JPS5116313B2 JPS5116313B2 JP47077256A JP7725672A JPS5116313B2 JP S5116313 B2 JPS5116313 B2 JP S5116313B2 JP 47077256 A JP47077256 A JP 47077256A JP 7725672 A JP7725672 A JP 7725672A JP S5116313 B2 JPS5116313 B2 JP S5116313B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/664—Inverted VDMOS transistors, i.e. source-down VDMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16829471A | 1971-08-02 | 1971-08-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4826085A JPS4826085A (enrdf_load_stackoverflow) | 1973-04-05 |
| JPS5116313B2 true JPS5116313B2 (enrdf_load_stackoverflow) | 1976-05-22 |
Family
ID=22610910
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47077256A Expired JPS5116313B2 (enrdf_load_stackoverflow) | 1971-08-02 | 1972-08-01 | |
| JP48112234A Expired JPS5227034B2 (enrdf_load_stackoverflow) | 1971-08-02 | 1973-10-05 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48112234A Expired JPS5227034B2 (enrdf_load_stackoverflow) | 1971-08-02 | 1973-10-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JPS5116313B2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS646190U (enrdf_load_stackoverflow) * | 1987-06-29 | 1989-01-13 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501684A (enrdf_load_stackoverflow) * | 1973-05-07 | 1975-01-09 | ||
| JPS53163678U (enrdf_load_stackoverflow) * | 1977-05-31 | 1978-12-21 | ||
| JPS5940579A (ja) * | 1982-08-30 | 1984-03-06 | Agency Of Ind Science & Technol | 絶縁ゲ−ト電界効果トランジスタ |
-
1972
- 1972-08-01 JP JP47077256A patent/JPS5116313B2/ja not_active Expired
-
1973
- 1973-10-05 JP JP48112234A patent/JPS5227034B2/ja not_active Expired
Non-Patent Citations (2)
| Title |
|---|
| ELECTRONICS FEBRUARY#N15=1971 * |
| ELECTRONICS JANUARY#N4=1971 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS646190U (enrdf_load_stackoverflow) * | 1987-06-29 | 1989-01-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5227034B2 (enrdf_load_stackoverflow) | 1977-07-18 |
| JPS5063880A (enrdf_load_stackoverflow) | 1975-05-30 |
| JPS4826085A (enrdf_load_stackoverflow) | 1973-04-05 |