JPS5116268B1 - - Google Patents
Info
- Publication number
- JPS5116268B1 JPS5116268B1 JP46087928A JP8792871A JPS5116268B1 JP S5116268 B1 JPS5116268 B1 JP S5116268B1 JP 46087928 A JP46087928 A JP 46087928A JP 8792871 A JP8792871 A JP 8792871A JP S5116268 B1 JPS5116268 B1 JP S5116268B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H10P30/209—
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- H10P30/206—
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- H10P30/208—
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- H10P90/1906—
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- H10W10/00—
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- H10W10/01—
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- H10W10/061—
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- H10W10/181—
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- H10P90/1908—
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- H10W10/012—
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- H10W10/13—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9096070A | 1970-11-19 | 1970-11-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5116268B1 true JPS5116268B1 (OSRAM) | 1976-05-22 |
Family
ID=22225133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP46087928A Pending JPS5116268B1 (OSRAM) | 1970-11-19 | 1971-11-04 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3707765A (OSRAM) |
| JP (1) | JPS5116268B1 (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4946800A (en) * | 1965-09-28 | 1990-08-07 | Li Chou H | Method for making solid-state device utilizing isolation grooves |
| US3770516A (en) * | 1968-08-06 | 1973-11-06 | Ibm | Monolithic integrated circuits |
| GB1334520A (en) * | 1970-06-12 | 1973-10-17 | Atomic Energy Authority Uk | Formation of electrically insulating layers in semiconducting materials |
| US3897274A (en) * | 1971-06-01 | 1975-07-29 | Texas Instruments Inc | Method of fabricating dielectrically isolated semiconductor structures |
| US3855009A (en) * | 1973-09-20 | 1974-12-17 | Texas Instruments Inc | Ion-implantation and conventional epitaxy to produce dielectrically isolated silicon layers |
| US3901737A (en) * | 1974-02-15 | 1975-08-26 | Signetics Corp | Method for forming a semiconductor structure having islands isolated by moats |
| US3983401A (en) * | 1975-03-13 | 1976-09-28 | Electron Beam Microfabrication Corporation | Method and apparatus for target support in electron projection systems |
| US4105805A (en) * | 1976-12-29 | 1978-08-08 | The United States Of America As Represented By The Secretary Of The Army | Formation of metal nitride oxide semiconductor (MNOS) by ion implantation of oxygen through a silicon nitride layer |
| US4158140A (en) * | 1977-06-15 | 1979-06-12 | Tokyo Shibaura Electric Co., Ltd. | Electron beam exposure apparatus |
| JPS5721856B2 (en) * | 1977-11-28 | 1982-05-10 | Nippon Telegraph & Telephone | Semiconductor and its manufacture |
| US4863878A (en) * | 1987-04-06 | 1989-09-05 | Texas Instruments Incorporated | Method of making silicon on insalator material using oxygen implantation |
| US5550069A (en) * | 1990-06-23 | 1996-08-27 | El Mos Electronik In Mos Technologie Gmbh | Method for producing a PMOS transistor |
| US5602403A (en) * | 1991-03-01 | 1997-02-11 | The United States Of America As Represented By The Secretary Of The Navy | Ion Implantation buried gate insulator field effect transistor |
| US5364800A (en) * | 1993-06-24 | 1994-11-15 | Texas Instruments Incorporated | Varying the thickness of the surface silicon layer in a silicon-on-insulator substrate |
| US5436499A (en) * | 1994-03-11 | 1995-07-25 | Spire Corporation | High performance GaAs devices and method |
| JP2661561B2 (ja) * | 1994-10-27 | 1997-10-08 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
| US6197656B1 (en) * | 1998-03-24 | 2001-03-06 | International Business Machines Corporation | Method of forming planar isolation and substrate contacts in SIMOX-SOI. |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4935029A (OSRAM) * | 1972-08-03 | 1974-04-01 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3655457A (en) * | 1968-08-06 | 1972-04-11 | Ibm | Method of making or modifying a pn-junction by ion implantation |
| US3586542A (en) * | 1968-11-22 | 1971-06-22 | Bell Telephone Labor Inc | Semiconductor junction devices |
| US3622382A (en) * | 1969-05-05 | 1971-11-23 | Ibm | Semiconductor isolation structure and method of producing |
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1970
- 1970-11-19 US US00090960A patent/US3707765A/en not_active Expired - Lifetime
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1971
- 1971-11-04 JP JP46087928A patent/JPS5116268B1/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4935029A (OSRAM) * | 1972-08-03 | 1974-04-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| US3707765A (en) | 1973-01-02 |