JPS51147280U - - Google Patents
Info
- Publication number
- JPS51147280U JPS51147280U JP6719875U JP6719875U JPS51147280U JP S51147280 U JPS51147280 U JP S51147280U JP 6719875 U JP6719875 U JP 6719875U JP 6719875 U JP6719875 U JP 6719875U JP S51147280 U JPS51147280 U JP S51147280U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6719875U JPS51147280U (nl) | 1975-05-21 | 1975-05-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6719875U JPS51147280U (nl) | 1975-05-21 | 1975-05-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51147280U true JPS51147280U (nl) | 1976-11-26 |
Family
ID=28533755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6719875U Pending JPS51147280U (nl) | 1975-05-21 | 1975-05-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51147280U (nl) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8877589B2 (en) | 2005-08-30 | 2014-11-04 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
| US8916912B2 (en) | 2005-07-08 | 2014-12-23 | Micron Technology, Inc. | Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls |
-
1975
- 1975-05-21 JP JP6719875U patent/JPS51147280U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8916912B2 (en) | 2005-07-08 | 2014-12-23 | Micron Technology, Inc. | Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls |
| US9536971B2 (en) | 2005-07-08 | 2017-01-03 | Micron Technology, Inc. | Semiconductor device comprising a transistor gate having multiple vertically oriented sidewalls |
| US8877589B2 (en) | 2005-08-30 | 2014-11-04 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |