JPS51121277A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51121277A JPS51121277A JP4580775A JP4580775A JPS51121277A JP S51121277 A JPS51121277 A JP S51121277A JP 4580775 A JP4580775 A JP 4580775A JP 4580775 A JP4580775 A JP 4580775A JP S51121277 A JPS51121277 A JP S51121277A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- moreover
- functional element
- mutually connected
- different functional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Abstract
PURPOSE:To provide an entirely new semiconductor device in which a pressure welded Tr and a different functional element are provided on the surface of a single semiconductor and, moreover, having their circuits mutually connected.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4580775A JPS51121277A (en) | 1975-04-17 | 1975-04-17 | Semiconductor device |
US05/645,960 US4035831A (en) | 1975-04-17 | 1976-01-02 | Radial emitter pressure contact type semiconductor devices |
GB435/76A GB1492707A (en) | 1975-04-17 | 1976-01-07 | Pressure contact type semiconductor devices |
DE2601131A DE2601131C2 (en) | 1975-04-17 | 1976-01-14 | Semiconductor devices with a pressure contact transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4580775A JPS51121277A (en) | 1975-04-17 | 1975-04-17 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51121277A true JPS51121277A (en) | 1976-10-23 |
Family
ID=12729519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4580775A Pending JPS51121277A (en) | 1975-04-17 | 1975-04-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51121277A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55107262A (en) * | 1979-02-10 | 1980-08-16 | Toshiba Corp | Semiconductor device |
-
1975
- 1975-04-17 JP JP4580775A patent/JPS51121277A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55107262A (en) * | 1979-02-10 | 1980-08-16 | Toshiba Corp | Semiconductor device |
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