JPS51117884A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51117884A
JPS51117884A JP50159725A JP15972575A JPS51117884A JP S51117884 A JPS51117884 A JP S51117884A JP 50159725 A JP50159725 A JP 50159725A JP 15972575 A JP15972575 A JP 15972575A JP S51117884 A JPS51117884 A JP S51117884A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50159725A
Other languages
English (en)
Inventor
Guriin Suchiyuwaato Rojiyaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS51117884A publication Critical patent/JPS51117884A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP50159725A 1975-04-03 1975-12-27 Semiconductor device Pending JPS51117884A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/564,910 US3999205A (en) 1975-04-03 1975-04-03 Rectifier structure for a semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS51117884A true JPS51117884A (en) 1976-10-16

Family

ID=24256399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50159725A Pending JPS51117884A (en) 1975-04-03 1975-12-27 Semiconductor device

Country Status (4)

Country Link
US (1) US3999205A (ja)
JP (1) JPS51117884A (ja)
DE (1) DE2559361C2 (ja)
IT (1) IT1051170B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148015A (en) * 1975-10-24 1979-04-03 Citizen Watch Co., Ltd. Electronic timepiece with an electrochromic display
US4156309A (en) * 1977-12-23 1979-05-29 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of construction of a multi-cell solar array
US4797773A (en) * 1986-05-09 1989-01-10 Transtector Systems, Inc. Spatial array filtering system for electrical devices
US4922371A (en) * 1988-11-01 1990-05-01 Teledyne Semiconductor ESD protection circuit for MOS integrated circuits
JPH07114328B2 (ja) * 1989-01-13 1995-12-06 株式会社村田製作所 ダブルバランスドミキサ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919016A (ja) * 1972-06-15 1974-02-20

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1176088A (en) * 1951-01-28 1970-01-01 Itt Temperature Compensated Zener Diode.
FR1559607A (ja) * 1967-06-30 1969-03-14
US3882529A (en) * 1967-10-06 1975-05-06 Texas Instruments Inc Punch-through semiconductor diodes
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
FR1583248A (ja) * 1968-06-27 1969-10-24
US3601625A (en) * 1969-06-25 1971-08-24 Texas Instruments Inc Mosic with protection against voltage surges
BE755039A (fr) * 1969-09-15 1971-02-01 Ibm Memoire semi-conductrice permanente
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3667009A (en) * 1970-12-28 1972-05-30 Motorola Inc Complementary metal oxide semiconductor gate protection diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919016A (ja) * 1972-06-15 1974-02-20

Also Published As

Publication number Publication date
DE2559361A1 (de) 1976-10-14
US3999205A (en) 1976-12-21
IT1051170B (it) 1981-04-21
DE2559361C2 (de) 1982-05-13

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