JPS51116662A - Cmos inverter - Google Patents

Cmos inverter

Info

Publication number
JPS51116662A
JPS51116662A JP51027015A JP2701576A JPS51116662A JP S51116662 A JPS51116662 A JP S51116662A JP 51027015 A JP51027015 A JP 51027015A JP 2701576 A JP2701576 A JP 2701576A JP S51116662 A JPS51116662 A JP S51116662A
Authority
JP
Japan
Prior art keywords
cmos inverter
cmos
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51027015A
Other languages
English (en)
Inventor
Hankeru Raineru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of JPS51116662A publication Critical patent/JPS51116662A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP51027015A 1975-03-15 1976-03-12 Cmos inverter Pending JPS51116662A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752511488 DE2511488A1 (de) 1975-03-15 1975-03-15 Cmos-inverter

Publications (1)

Publication Number Publication Date
JPS51116662A true JPS51116662A (en) 1976-10-14

Family

ID=5941534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51027015A Pending JPS51116662A (en) 1975-03-15 1976-03-12 Cmos inverter

Country Status (5)

Country Link
US (1) US4024418A (ja)
JP (1) JPS51116662A (ja)
DE (1) DE2511488A1 (ja)
GB (1) GB1483169A (ja)
IT (1) IT1058422B (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643605A (en) * 1979-09-18 1981-04-22 Fujitsu Ltd Photoswitch
US4634890A (en) * 1984-09-06 1987-01-06 Thomson Components-Mostek Corporation Clamping circuit finding particular application between a single sided output of a computer memory and a differential amplifier sensing circuit
JPH0197013A (ja) * 1987-10-09 1989-04-14 Hitachi Ltd 半導体回路装置
US4958132A (en) * 1989-05-09 1990-09-18 Advanced Micro Devices, Inc. Complementary metal-oxide-semiconductor translator
US4958093A (en) * 1989-05-25 1990-09-18 International Business Machines Corporation Voltage clamping circuits with high current capability
US6429492B1 (en) * 1999-06-23 2002-08-06 Bae Systems Information And Electronic Systems Integration, Inc. Low-power CMOS device and logic gates/circuits therewith
US6576962B2 (en) 2000-06-21 2003-06-10 Bae Systems Information And Electronics Systems Integration, Inc. CMOS SRAM cell with prescribed power-on data state
US6855988B2 (en) * 2002-07-08 2005-02-15 Viciciv Technology Semiconductor switching devices
GB2466643B (en) 2008-12-30 2011-05-04 Wolfson Microelectronics Plc Semiconductor structures for biasing devices
WO2013070475A1 (en) * 2011-11-07 2013-05-16 Ulta-Lit Tree Co. Led light string diagnostic and repair system
FI20150334A (fi) 2015-01-14 2016-07-15 Artto Mikael Aurola Paranneltu puolijohdekokoonpano

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500062A (en) * 1967-05-10 1970-03-10 Rca Corp Digital logic apparatus
US3510684A (en) * 1967-07-03 1970-05-05 United Aircraft Corp Solid state differential input chopper
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor
US3539928A (en) * 1968-11-13 1970-11-10 United Aircraft Corp Operational multiplexer
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3855549A (en) * 1973-08-24 1974-12-17 Rca Corp Circuit, such as cmos crystal oscillator, with reduced power consumption

Also Published As

Publication number Publication date
DE2511488A1 (de) 1976-09-23
IT1058422B (it) 1982-04-10
US4024418A (en) 1977-05-17
GB1483169A (en) 1977-08-17

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