JPS51107180A - - Google Patents

Info

Publication number
JPS51107180A
JPS51107180A JP1434176A JP1434176A JPS51107180A JP S51107180 A JPS51107180 A JP S51107180A JP 1434176 A JP1434176 A JP 1434176A JP 1434176 A JP1434176 A JP 1434176A JP S51107180 A JPS51107180 A JP S51107180A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1434176A
Other languages
Japanese (ja)
Other versions
JPS5936218B2 (ja
Inventor
Eeritsuku Rindohorumu Raashu
Ieeran Beeterushon Beeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SERUKOMU AB
Original Assignee
SERUKOMU AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SERUKOMU AB filed Critical SERUKOMU AB
Publication of JPS51107180A publication Critical patent/JPS51107180A/ja
Publication of JPS5936218B2 publication Critical patent/JPS5936218B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Optical Transform (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP51014341A 1975-02-13 1976-02-12 位置規定用二重面ラテラル光検出器の直線性改良方法 Expired JPS5936218B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7501587A SE388684B (sv) 1975-02-13 1975-02-13 Sett att forbettra lineariteten hos en fotodetektor

Publications (2)

Publication Number Publication Date
JPS51107180A true JPS51107180A (sl) 1976-09-22
JPS5936218B2 JPS5936218B2 (ja) 1984-09-03

Family

ID=20323672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51014341A Expired JPS5936218B2 (ja) 1975-02-13 1976-02-12 位置規定用二重面ラテラル光検出器の直線性改良方法

Country Status (3)

Country Link
JP (1) JPS5936218B2 (sl)
DE (1) DE2604558C2 (sl)
SE (1) SE388684B (sl)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3792257A (en) * 1972-03-31 1974-02-12 Us Navy Lateral photodetectors

Also Published As

Publication number Publication date
SE388684B (sv) 1976-10-11
SE7501587L (sv) 1976-08-16
DE2604558A1 (de) 1976-08-26
DE2604558C2 (de) 1986-01-23
JPS5936218B2 (ja) 1984-09-03

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