JPS509629B1 - - Google Patents

Info

Publication number
JPS509629B1
JPS509629B1 JP45071115A JP7111570A JPS509629B1 JP S509629 B1 JPS509629 B1 JP S509629B1 JP 45071115 A JP45071115 A JP 45071115A JP 7111570 A JP7111570 A JP 7111570A JP S509629 B1 JPS509629 B1 JP S509629B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45071115A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS509629B1 publication Critical patent/JPS509629B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP45071115A 1969-08-14 1970-08-13 Pending JPS509629B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85001569A 1969-08-14 1969-08-14

Publications (1)

Publication Number Publication Date
JPS509629B1 true JPS509629B1 (ja) 1975-04-14

Family

ID=25307056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45071115A Pending JPS509629B1 (ja) 1969-08-14 1970-08-13

Country Status (4)

Country Link
US (1) US3598082A (ja)
JP (1) JPS509629B1 (ja)
CA (1) CA936451A (ja)
GB (1) GB1320714A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53104829U (ja) * 1977-01-31 1978-08-23

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2054538C3 (de) * 1970-11-05 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von Schichten aus Halbleitermaterial
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
US4803947A (en) * 1986-01-15 1989-02-14 Canon Kabushiki Kaisha Apparatus for forming deposited film
US5044314A (en) * 1986-10-15 1991-09-03 Advantage Production Technology, Inc. Semiconductor wafer processing apparatus
US4949669A (en) * 1988-12-20 1990-08-21 Texas Instruments Incorporated Gas flow systems in CCVD reactors
US4941429A (en) * 1988-12-20 1990-07-17 Texas Instruments Incorporated Semiconductor wafer carrier guide tracks
US6093252A (en) * 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
US7169233B2 (en) * 2003-11-21 2007-01-30 Asm America, Inc. Reactor chamber
USD1028913S1 (en) 2021-06-30 2024-05-28 Asm Ip Holding B.V. Semiconductor deposition reactor ring

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2674809A (en) * 1950-08-24 1954-04-13 Raduner & Co Ag Apparatus for thermic treatment by infrared radiation
US3190262A (en) * 1961-10-20 1965-06-22 Alloyd Corp Vapor deposition
US3473510A (en) * 1966-02-23 1969-10-21 Corning Glass Works Method and apparatus for the continuous doping of semiconductor materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53104829U (ja) * 1977-01-31 1978-08-23

Also Published As

Publication number Publication date
GB1320714A (en) 1973-06-20
CA936451A (en) 1973-11-06
US3598082A (en) 1971-08-10

Similar Documents

Publication Publication Date Title
AU465452B2 (ja)
AU429630B2 (ja)
JPS509629B1 (ja)
AU450150B2 (ja)
AU2355770A (ja)
CS150502B2 (ja)
AU427401B2 (ja)
AU470301B1 (ja)
AU438128B2 (ja)
AU428131B2 (ja)
AU414607B2 (ja)
AU410358B2 (ja)
AU417208B2 (ja)
AU442554B2 (ja)
AU442538B2 (ja)
AU442535B2 (ja)
AU442463B2 (ja)
AU442380B2 (ja)
AU442322B2 (ja)
AU442285B2 (ja)
AU470661B1 (ja)
AU428074B2 (ja)
AU428129B2 (ja)
CS148413B1 (ja)
CS148414B1 (ja)