JPS5089262U - - Google Patents

Info

Publication number
JPS5089262U
JPS5089262U JP1974152273U JP15227374U JPS5089262U JP S5089262 U JPS5089262 U JP S5089262U JP 1974152273 U JP1974152273 U JP 1974152273U JP 15227374 U JP15227374 U JP 15227374U JP S5089262 U JPS5089262 U JP S5089262U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1974152273U
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5089262U publication Critical patent/JPS5089262U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP1974152273U 1973-12-17 1974-12-17 Pending JPS5089262U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US425668A US3868720A (en) 1973-12-17 1973-12-17 High frequency bipolar transistor with integral thermally compensated degenerative feedback resistance

Publications (1)

Publication Number Publication Date
JPS5089262U true JPS5089262U (ja) 1975-07-29

Family

ID=23687538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1974152273U Pending JPS5089262U (ja) 1973-12-17 1974-12-17

Country Status (2)

Country Link
US (1) US3868720A (ja)
JP (1) JPS5089262U (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.
JPS6017956A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 耐放射線半導体素子
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
US4639290A (en) * 1985-12-09 1987-01-27 Hughes Aircraft Company Methods for selectively removing adhesives from polyimide substrates
EP0590804B1 (en) * 1992-09-03 1997-02-05 STMicroelectronics, Inc. Vertically isolated monolithic bipolar high-power transistor with top collector
TW463283B (en) * 2000-11-03 2001-11-11 Mosel Vitelic Inc Inspection method of photolithography process for power transistor processing
US6943414B2 (en) * 2001-03-15 2005-09-13 Newport Fab, Llc Method for fabricating a metal resistor in an IC chip and related structure
GB0200067D0 (en) * 2002-01-03 2002-02-20 Qinetiq Ltd Wide bandgap transistors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3445727A (en) * 1967-05-15 1969-05-20 Raytheon Co Semiconductor contact and interconnection structure
US3769563A (en) * 1972-05-03 1973-10-30 Westinghouse Electric Corp High speed, high voltage transistor

Also Published As

Publication number Publication date
US3868720A (en) 1975-02-25

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