JPS5089262U - - Google Patents
Info
- Publication number
- JPS5089262U JPS5089262U JP1974152273U JP15227374U JPS5089262U JP S5089262 U JPS5089262 U JP S5089262U JP 1974152273 U JP1974152273 U JP 1974152273U JP 15227374 U JP15227374 U JP 15227374U JP S5089262 U JPS5089262 U JP S5089262U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US425668A US3868720A (en) | 1973-12-17 | 1973-12-17 | High frequency bipolar transistor with integral thermally compensated degenerative feedback resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5089262U true JPS5089262U (ja) | 1975-07-29 |
Family
ID=23687538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1974152273U Pending JPS5089262U (ja) | 1973-12-17 | 1974-12-17 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3868720A (ja) |
| JP (1) | JPS5089262U (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8204878A (nl) * | 1982-12-17 | 1984-07-16 | Philips Nv | Halfgeleiderinrichting. |
| JPS6017956A (ja) * | 1983-07-11 | 1985-01-29 | Agency Of Ind Science & Technol | 耐放射線半導体素子 |
| DE3329241A1 (de) * | 1983-08-12 | 1985-02-21 | Siemens AG, 1000 Berlin und 8000 München | Leistungstransistor |
| US4639290A (en) * | 1985-12-09 | 1987-01-27 | Hughes Aircraft Company | Methods for selectively removing adhesives from polyimide substrates |
| DE69307983T2 (de) * | 1992-09-03 | 1997-05-28 | Sgs Thomson Microelectronics | Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor |
| TW463283B (en) * | 2000-11-03 | 2001-11-11 | Mosel Vitelic Inc | Inspection method of photolithography process for power transistor processing |
| US6943414B2 (en) * | 2001-03-15 | 2005-09-13 | Newport Fab, Llc | Method for fabricating a metal resistor in an IC chip and related structure |
| GB0200067D0 (en) * | 2002-01-03 | 2002-02-20 | Qinetiq Ltd | Wide bandgap transistors |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3504239A (en) * | 1964-01-31 | 1970-03-31 | Rca Corp | Transistor with distributed resistor between emitter lead and emitter region |
| US3445727A (en) * | 1967-05-15 | 1969-05-20 | Raytheon Co | Semiconductor contact and interconnection structure |
| US3769563A (en) * | 1972-05-03 | 1973-10-30 | Westinghouse Electric Corp | High speed, high voltage transistor |
-
1973
- 1973-12-17 US US425668A patent/US3868720A/en not_active Expired - Lifetime
-
1974
- 1974-12-17 JP JP1974152273U patent/JPS5089262U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3868720A (en) | 1975-02-25 |