JPS5076983A - - Google Patents

Info

Publication number
JPS5076983A
JPS5076983A JP9984674A JP9984674A JPS5076983A JP S5076983 A JPS5076983 A JP S5076983A JP 9984674 A JP9984674 A JP 9984674A JP 9984674 A JP9984674 A JP 9984674A JP S5076983 A JPS5076983 A JP S5076983A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9984674A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5076983A publication Critical patent/JPS5076983A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Ceramic Products (AREA)
JP9984674A 1973-08-30 1974-08-30 Pending JPS5076983A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4079073A GB1474902A (en) 1973-08-30 1973-08-30 Semiconductor devices

Publications (1)

Publication Number Publication Date
JPS5076983A true JPS5076983A (zh) 1975-06-24

Family

ID=10416620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9984674A Pending JPS5076983A (zh) 1973-08-30 1974-08-30

Country Status (2)

Country Link
JP (1) JPS5076983A (zh)
GB (1) GB1474902A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107452723A (zh) * 2017-07-26 2017-12-08 济南市半导体元件实验所 一种高压大功率碳化硅肖特基整流桥及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2476960A1 (fr) * 1980-02-26 1981-08-28 Thomson Csf Procede d'encapsulation hermetique de composants electroniques a tres haute frequence, comportant la pose de traversees metalliques, dispositif realise par un tel procede
FR2525391B1 (fr) * 1982-04-16 1985-09-13 Thomson Csf Substrat pour circuit electronique fonctionnant dans la gamme des hyperfrequences, et procede de metallisation de ce substrat
CN109520664A (zh) * 2018-12-20 2019-03-26 西安赛尔电子材料科技有限公司 一种钛合金压阻式压力传感器基座及其制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107452723A (zh) * 2017-07-26 2017-12-08 济南市半导体元件实验所 一种高压大功率碳化硅肖特基整流桥及其制备方法
CN107452723B (zh) * 2017-07-26 2023-09-15 济南市半导体元件实验所 一种高压大功率碳化硅肖特基整流桥及其制备方法

Also Published As

Publication number Publication date
GB1474902A (en) 1977-05-25

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