JPS5069974A - - Google Patents

Info

Publication number
JPS5069974A
JPS5069974A JP48106998A JP10699873A JPS5069974A JP S5069974 A JPS5069974 A JP S5069974A JP 48106998 A JP48106998 A JP 48106998A JP 10699873 A JP10699873 A JP 10699873A JP S5069974 A JPS5069974 A JP S5069974A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48106998A
Other languages
Japanese (ja)
Other versions
JPS5132543B2 (en, 2012
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48106998A priority Critical patent/JPS5132543B2/ja
Publication of JPS5069974A publication Critical patent/JPS5069974A/ja
Publication of JPS5132543B2 publication Critical patent/JPS5132543B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP48106998A 1973-09-25 1973-09-25 Expired JPS5132543B2 (en, 2012)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48106998A JPS5132543B2 (en, 2012) 1973-09-25 1973-09-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48106998A JPS5132543B2 (en, 2012) 1973-09-25 1973-09-25

Publications (2)

Publication Number Publication Date
JPS5069974A true JPS5069974A (en, 2012) 1975-06-11
JPS5132543B2 JPS5132543B2 (en, 2012) 1976-09-13

Family

ID=14447874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48106998A Expired JPS5132543B2 (en, 2012) 1973-09-25 1973-09-25

Country Status (1)

Country Link
JP (1) JPS5132543B2 (en, 2012)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106565A (en, 2012) * 1974-01-11 1975-08-22
JPS55132964U (en, 2012) * 1979-03-14 1980-09-20
JPS6459873A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106565A (en, 2012) * 1974-01-11 1975-08-22
JPS55132964U (en, 2012) * 1979-03-14 1980-09-20
JPS6459873A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5132543B2 (en, 2012) 1976-09-13

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