JPS5068268A - - Google Patents
Info
- Publication number
- JPS5068268A JPS5068268A JP11858974A JP11858974A JPS5068268A JP S5068268 A JPS5068268 A JP S5068268A JP 11858974 A JP11858974 A JP 11858974A JP 11858974 A JP11858974 A JP 11858974A JP S5068268 A JPS5068268 A JP S5068268A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3425—Metals, metal alloys
Landscapes
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US406183A US3867662A (en) | 1973-10-15 | 1973-10-15 | Grating tuned photoemitter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5068268A true JPS5068268A (cg-RX-API-DMAC10.html) | 1975-06-07 |
| JPS5210630B2 JPS5210630B2 (cg-RX-API-DMAC10.html) | 1977-03-25 |
Family
ID=23606881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11858974A Expired JPS5210630B2 (cg-RX-API-DMAC10.html) | 1973-10-15 | 1974-10-14 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3867662A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5210630B2 (cg-RX-API-DMAC10.html) |
| CA (1) | CA1023832A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2449049A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2247825A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1479163A (cg-RX-API-DMAC10.html) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7600425A (nl) * | 1976-01-16 | 1977-07-19 | Philips Nv | Televisie-opneembuis. |
| US4147949A (en) * | 1977-01-14 | 1979-04-03 | General Electric Company | Apparatus for X-ray radiography |
| US4196257A (en) * | 1978-07-20 | 1980-04-01 | Rca Corporation | Bi-alkali telluride photocathode |
| US4853595A (en) * | 1987-08-31 | 1989-08-01 | Alfano Robert R | Photomultiplier tube having a transmission strip line photocathode and system for use therewith |
| JP2758529B2 (ja) * | 1992-04-22 | 1998-05-28 | 浜松ホトニクス株式会社 | 反射型光電面および光電子増倍管 |
| JP3518880B2 (ja) * | 1992-06-11 | 2004-04-12 | 浜松ホトニクス株式会社 | 反射型アルカリ光電面および光電子増倍管 |
| US5336902A (en) * | 1992-10-05 | 1994-08-09 | Hamamatsu Photonics K.K. | Semiconductor photo-electron-emitting device |
| US5633562A (en) * | 1993-02-02 | 1997-05-27 | Hamamatsu Photonics K.K. | Reflection mode alkali photocathode, and photomultiplier using the same |
| GB9620037D0 (en) * | 1996-09-26 | 1996-11-13 | British Tech Group | Radiation transducers |
| US6054718A (en) * | 1998-03-31 | 2000-04-25 | Lockheed Martin Corporation | Quantum well infrared photocathode having negative electron affinity surface |
| US6538256B1 (en) | 2000-08-17 | 2003-03-25 | Applied Materials, Inc. | Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance |
| US7315115B1 (en) * | 2000-10-27 | 2008-01-01 | Canon Kabushiki Kaisha | Light-emitting and electron-emitting devices having getter regions |
| US6630786B2 (en) * | 2001-03-30 | 2003-10-07 | Candescent Technologies Corporation | Light-emitting device having light-reflective layer formed with, or/and adjacent to, material that enhances device performance |
| US7301263B2 (en) * | 2004-05-28 | 2007-11-27 | Applied Materials, Inc. | Multiple electron beam system with electron transmission gates |
| EP2252545A2 (en) * | 2008-03-10 | 2010-11-24 | Yeda Research And Development Company Ltd. | Method for fabricating nano-scale patterned surfaces |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL235195A (cg-RX-API-DMAC10.html) * | 1958-01-18 | |||
| US3163765A (en) * | 1961-06-14 | 1964-12-29 | Rauland Corp | Gamma ray image converters |
| US3588570A (en) * | 1968-04-29 | 1971-06-28 | Westinghouse Electric Corp | Masked photocathode structure with a masked,patterned layer of titanium oxide |
-
1973
- 1973-10-15 US US406183A patent/US3867662A/en not_active Expired - Lifetime
-
1974
- 1974-10-08 FR FR7433833A patent/FR2247825A1/fr not_active Withdrawn
- 1974-10-10 GB GB43938/74A patent/GB1479163A/en not_active Expired
- 1974-10-11 CA CA211,330A patent/CA1023832A/en not_active Expired
- 1974-10-14 JP JP11858974A patent/JPS5210630B2/ja not_active Expired
- 1974-10-15 DE DE19742449049 patent/DE2449049A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3867662A (en) | 1975-02-18 |
| JPS5210630B2 (cg-RX-API-DMAC10.html) | 1977-03-25 |
| GB1479163A (en) | 1977-07-06 |
| DE2449049A1 (de) | 1975-05-28 |
| CA1023832A (en) | 1978-01-03 |
| FR2247825A1 (cg-RX-API-DMAC10.html) | 1975-05-09 |