JPS5068065A - - Google Patents
Info
- Publication number
- JPS5068065A JPS5068065A JP48115760A JP11576073A JPS5068065A JP S5068065 A JPS5068065 A JP S5068065A JP 48115760 A JP48115760 A JP 48115760A JP 11576073 A JP11576073 A JP 11576073A JP S5068065 A JPS5068065 A JP S5068065A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11576073A JPS5636567B2 (enExample) | 1973-10-17 | 1973-10-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11576073A JPS5636567B2 (enExample) | 1973-10-17 | 1973-10-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5068065A true JPS5068065A (enExample) | 1975-06-07 |
| JPS5636567B2 JPS5636567B2 (enExample) | 1981-08-25 |
Family
ID=14670355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11576073A Expired JPS5636567B2 (enExample) | 1973-10-17 | 1973-10-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5636567B2 (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5539672A (en) * | 1978-09-14 | 1980-03-19 | Fujitsu Ltd | Manufacturing semiconductor device |
| JPS5615080A (en) * | 1979-07-18 | 1981-02-13 | Fujitsu Ltd | Mos type field effect transistor |
| JPS5667966A (en) * | 1979-11-07 | 1981-06-08 | Nec Corp | Semiconductor device and preparation method thereof |
| JPS56101757A (en) * | 1980-01-18 | 1981-08-14 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPH04367235A (ja) * | 1991-06-14 | 1992-12-18 | Sharp Corp | 半導体装置の製造方法 |
-
1973
- 1973-10-17 JP JP11576073A patent/JPS5636567B2/ja not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5539672A (en) * | 1978-09-14 | 1980-03-19 | Fujitsu Ltd | Manufacturing semiconductor device |
| JPS5615080A (en) * | 1979-07-18 | 1981-02-13 | Fujitsu Ltd | Mos type field effect transistor |
| JPS5667966A (en) * | 1979-11-07 | 1981-06-08 | Nec Corp | Semiconductor device and preparation method thereof |
| JPS56101757A (en) * | 1980-01-18 | 1981-08-14 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPH04367235A (ja) * | 1991-06-14 | 1992-12-18 | Sharp Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5636567B2 (enExample) | 1981-08-25 |