JPS5063880A - - Google Patents

Info

Publication number
JPS5063880A
JPS5063880A JP48112234A JP11223473A JPS5063880A JP S5063880 A JPS5063880 A JP S5063880A JP 48112234 A JP48112234 A JP 48112234A JP 11223473 A JP11223473 A JP 11223473A JP S5063880 A JPS5063880 A JP S5063880A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48112234A
Other languages
Japanese (ja)
Other versions
JPS5227034B2 (cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5063880A publication Critical patent/JPS5063880A/ja
Publication of JPS5227034B2 publication Critical patent/JPS5227034B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • H10D30/664Inverted VDMOS transistors, i.e. source-down VDMOS transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311Gate electrodes for field-effect devices
    • H10D64/411Gate electrodes for field-effect devices for FETs
    • H10D64/511Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP48112234A 1971-08-02 1973-10-05 Expired JPS5227034B2 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16829471A 1971-08-02 1971-08-02

Publications (2)

Publication Number Publication Date
JPS5063880A true JPS5063880A (cs) 1975-05-30
JPS5227034B2 JPS5227034B2 (cs) 1977-07-18

Family

ID=22610910

Family Applications (2)

Application Number Title Priority Date Filing Date
JP47077256A Expired JPS5116313B2 (cs) 1971-08-02 1972-08-01
JP48112234A Expired JPS5227034B2 (cs) 1971-08-02 1973-10-05

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP47077256A Expired JPS5116313B2 (cs) 1971-08-02 1972-08-01

Country Status (1)

Country Link
JP (2) JPS5116313B2 (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940579A (ja) * 1982-08-30 1984-03-06 Agency Of Ind Science & Technol 絶縁ゲ−ト電界効果トランジスタ

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501684A (cs) * 1973-05-07 1975-01-09
JPS53163678U (cs) * 1977-05-31 1978-12-21
JPS646190U (cs) * 1987-06-29 1989-01-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940579A (ja) * 1982-08-30 1984-03-06 Agency Of Ind Science & Technol 絶縁ゲ−ト電界効果トランジスタ

Also Published As

Publication number Publication date
JPS5116313B2 (cs) 1976-05-22
JPS5227034B2 (cs) 1977-07-18
JPS4826085A (cs) 1973-04-05

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