JPS5051667A - - Google Patents
Info
- Publication number
- JPS5051667A JPS5051667A JP6172374A JP6172374A JPS5051667A JP S5051667 A JPS5051667 A JP S5051667A JP 6172374 A JP6172374 A JP 6172374A JP 6172374 A JP6172374 A JP 6172374A JP S5051667 A JPS5051667 A JP S5051667A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00393627A US3825449A (en) | 1973-08-31 | 1973-08-31 | Method of depositing epitaxial layers on a substrate from the liquid phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5051667A true JPS5051667A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-05-08 |
| JPS5337187B2 JPS5337187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-10-06 |
Family
ID=23555553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6172374A Expired JPS5337187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-08-31 | 1974-05-30 |
Country Status (6)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1365465A (en) * | 1973-02-06 | 1974-09-04 | Standard Telephones Cables Ltd | Semiconductor device manufacture |
| DE2641347C2 (de) * | 1976-09-14 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von epitaxialen Schichten auf einkristallinen Substraten |
| JPS5492062U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1977-12-12 | 1979-06-29 | ||
| JPS54159367U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1978-04-28 | 1979-11-07 | ||
| DE2910723A1 (de) * | 1979-03-19 | 1980-09-25 | Siemens Ag | Verfahren zum herstellen von epitaktischen halbleitermaterialschichten auf einkristallinen substraten nach der fluessigphasen-schiebe-epitaxie |
| JPS55147310U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1979-04-04 | 1980-10-23 | ||
| JPS6132109U (ja) * | 1984-07-31 | 1986-02-26 | 古河電気工業株式会社 | 磁性ベルトコンベアユニツト |
| US5326716A (en) * | 1986-02-11 | 1994-07-05 | Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy |
| US5185288A (en) * | 1988-08-26 | 1993-02-09 | Hewlett-Packard Company | Epitaxial growth method |
| JP2693032B2 (ja) * | 1990-10-16 | 1997-12-17 | キヤノン株式会社 | 半導体層の形成方法及びこれを用いる太陽電池の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS538473A (en) * | 1976-07-09 | 1978-01-25 | Wagner Electric Corp | Airroperated disk brake |
-
1973
- 1973-08-31 US US00393627A patent/US3825449A/en not_active Expired - Lifetime
-
1974
- 1974-05-14 GB GB2124474A patent/GB1441851A/en not_active Expired
- 1974-05-15 CA CA200,032A patent/CA1022439A/en not_active Expired
- 1974-05-28 DE DE2425747A patent/DE2425747C3/de not_active Expired
- 1974-05-30 JP JP6172374A patent/JPS5337187B2/ja not_active Expired
- 1974-05-31 FR FR7418981A patent/FR2245404B1/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS538473A (en) * | 1976-07-09 | 1978-01-25 | Wagner Electric Corp | Airroperated disk brake |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2245404A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-04-25 |
| DE2425747C3 (de) | 1978-09-14 |
| JPS5337187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-10-06 |
| US3825449A (en) | 1974-07-23 |
| GB1441851A (en) | 1976-07-07 |
| DE2425747A1 (de) | 1975-03-06 |
| CA1022439A (en) | 1977-12-13 |
| FR2245404B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-04-11 |
| DE2425747B2 (de) | 1978-01-12 |